Datasheet TCRT5000 (Vishay) - 2

TCRT5000, TCRT5000L
Vishay Semiconductors Reflective Optical Sensor with Transistor Output
ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION SYMBOL VALUE UNIT OUTPUT (DETECTOR)
Collector emitter voltage VCEO 70 V Emitter collector voltage VECO 5 V Collector current IC 100 mA Power dissipation Tamb ≤ 55 °C PV 100 mW Junction temperature Tj 100 °C
SENSOR
Total power dissipation Tamb ≤ 25 °C Ptot 200 mW Ambient temperature range Tamb - 25 to + 85 °C Storage temperature range Tstg - 25 to + 100 °C Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C
Note
(1) Tamb = 25 °C, unless otherwise specified
ABSOLUTE MAXIMUM RATINGS
300 ) W Coupled device (m 200 Phototransistor er Dissipation w 100 IR - diode P - Po 0 0 25 50 75 100 95 11071 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (1) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT (EMITTER)
Forward voltage IF = 60 mA VF 1.25 1.5 V Junction capacitance VR = 0 V, f = 1 MHz Cj 17 pF Radiant intensity IF = 60 mA, tp = 20 ms Ie 21 mW/sr Peak wavelength IF = 100 mA λP 940 nm Virtual source diameter Method: 63 % encircled energy d 2.1 mm
OUTPUT (DETECTOR)
Collector emitter voltage IC = 1 mA VCEO 70 V Emitter collector voltage Ie = 100 µA VECO 7 V Collector dark current VCE = 20 V, IF = 0 A, E = 0 lx ICEO 10 200 nA
SENSOR
V Collector current CE = 5 V, IF = 10 mA, I D = 12 mm C (2) (3) 0.5 1 2.1 mA Collector emitter saturation IF = 10 mA, IC = 0.1 mA, V voltage D = 12 mm CEsat (2) (3) 0.4 V
Note
(1) Tamb = 25 °C, unless otherwise specified (2) See figure 3 (3) Test surface: mirror (Mfr. Spindler a. Hoyer, Part No. 340005) www.vishay.com For technical questions, contact: sensorstechsupport@vishay.com Document Number: 83760 2 Rev. 1.7, 17-Aug-09