Datasheet IRF9610 (Vishay) - 4
| Fabricante | Vishay |
| Descripción | Power MOSFET in TO-220 package |
| Páginas / Página | 7 / 4 — IRF9610. Fig. 6 - Typical Transconductance vs. Drain Current. Fig. 9 - … |
| Formato / tamaño de archivo | PDF / 133 Kb |
| Idioma del documento | Inglés |
IRF9610. Fig. 6 - Typical Transconductance vs. Drain Current. Fig. 9 - Normalized On-Resistance vs. Temperature
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IRF9610
www.vishay.com Vishay Siliconix 2.0 2.5 80 µs Pulse Test I = - 0.6 A D V > I x R max. V = - 10 V DS D(on) DS(on) GS 1.6 2.0 T = - 55 °C J 1.2 ed) 1.5 T = 25 °C J T = 125 °C maliz J 0.8 1.0 (Nor ransconductance (S) ,T ain-to-Source On Resistance fsg 0.4 , Dr 0.5 DS(on) 0.0 R 0.0 0 - 0.48 - 0.96 - 1.44 - 1.92 - 2.40 - 40 0 40 80 120 160 91080_06 ID, Drain Current (A) 91080_09 TJ, Junction Temperature (°C)
Fig. 6 - Typical Transconductance vs. Drain Current Fig. 9 - Normalized On-Resistance vs. Temperature
- 10.0 500 VGS = 0 V, f = 1 MHz C = C + C , C Shorted - 5.0 iss gs gd ds C = C 400 rss gd C , C C = C + gs gd oss ds C + C gs gd - 2.0 ≈ C + C 300 gs gd - 1.0 T = 150 °C C J iss ain Current (A) 200 - 0.5 T = 25 °C J , Dr , Capacitance (pF) Coss I D C 100 - 0.2 Crss - 0.1 0 - 2.0 - 3.2 - 4.4 - 5.6 - 6.8 - 8.0 0 - 10 - 20 - 30 - 40 - 50 91080_07 VSD, Source-to-Drain Voltage (V) 91080_10 VDS, Drain-to-Source Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
1.25 20 I = - 1.8 A wn D ltage (V) V = - 100 V 1.15 o DS V 16 ed) V = - 60 V DS V = - 40 V DS maliz 1.05 12 0.95 8 ain-to-Source Breakdo ltage (Nor o , Gate-to-Source , Dr V GS 0.85 4 e V DSS For test circuit BV 0.75 see figure 18 0 - 40 0 40 80 120 160 Negativ 0 2 4 6 8 91080_08 TJ, Junction Temperature (°C) 91080_11 QG, Total Gate Charge (nC)
Fig. 8 - Breakdown Voltage vs. Temperature Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0867-Rev. C, 16-Aug-2021
4
Document Number: 91080 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix 2.0 2.5 80 µs Pulse Test I = - 0.6 A D V > I x R max. V = - 10 V DS D(on) DS(on) GS 1.6 2.0 T = - 55 °C J 1.2 ed) 1.5 T = 25 °C J T = 125 °C maliz J 0.8 1.0 (Nor ransconductance (S) ,T ain-to-Source On Resistance fsg 0.4 , Dr 0.5 DS(on) 0.0 R 0.0 0 - 0.48 - 0.96 - 1.44 - 1.92 - 2.40 - 40 0 40 80 120 160 91080_06 ID, Drain Current (A) 91080_09 TJ, Junction Temperature (°C)
Fig. 6 - Typical Transconductance vs. Drain Current Fig. 9 - Normalized On-Resistance vs. Temperature
- 10.0 500 VGS = 0 V, f = 1 MHz C = C + C , C Shorted - 5.0 iss gs gd ds C = C 400 rss gd C , C C = C + gs gd oss ds C + C gs gd - 2.0 ≈ C + C 300 gs gd - 1.0 T = 150 °C C J iss ain Current (A) 200 - 0.5 T = 25 °C J , Dr , Capacitance (pF) Coss I D C 100 - 0.2 Crss - 0.1 0 - 2.0 - 3.2 - 4.4 - 5.6 - 6.8 - 8.0 0 - 10 - 20 - 30 - 40 - 50 91080_07 VSD, Source-to-Drain Voltage (V) 91080_10 VDS, Drain-to-Source Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 10 - Typical Capacitance vs. Drain-to-Source Voltage
1.25 20 I = - 1.8 A wn D ltage (V) V = - 100 V 1.15 o DS V 16 ed) V = - 60 V DS V = - 40 V DS maliz 1.05 12 0.95 8 ain-to-Source Breakdo ltage (Nor o , Gate-to-Source , Dr V GS 0.85 4 e V DSS For test circuit BV 0.75 see figure 18 0 - 40 0 40 80 120 160 Negativ 0 2 4 6 8 91080_08 TJ, Junction Temperature (°C) 91080_11 QG, Total Gate Charge (nC)
Fig. 8 - Breakdown Voltage vs. Temperature Fig. 11 - Typical Gate Charge vs. Gate-to-Source Voltage
S21-0867-Rev. C, 16-Aug-2021
4
Document Number: 91080 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000