Datasheet IRF9610 (Vishay) - 5

IRF9610
www.vishay.com Vishay Siliconix 7 R measured with current pulse of L DS(on) 2.0 µs duration. Initial T = 25 °C. J Vary t 6 p to obtain (Heating effect of 2.0 µs pulse is minimal.) required IL ) VDS - V 5 Ω DD V = - 10 V GS D.U.T. + 4 VGS = - 10 V tp EC ain-to-Source 0.05 Ω 3 IL , Dr V = - 20 V GS VDD = 0.5 VDS EC = 0.75 VDS On Resistance ( 2 DS(on)R
Fig. 15 - Clamped Inductive Test Circuit
1 0 0 - 1 - 2 - 3 - 4 - 5 - 6 - 7 VDD 91080_12 ID, Drain Current (A)
Fig. 12 - Typical On-Resistance vs. Drain Current
IL 2.0 tp VDS 1.6 EC
Fig. 16 - Clamped Inductive Waveforms
1.2 ain Current (A) R , Dr D D 0.8 VDS e I VGS 0.4 D.U.T. R - Negativ G +VDD 0.0 25 50 75 100 125 150 - 10 V Pulse width ≤ 1 µs 91080_13 TC, Case Temperature (°C) Duty factor ≤ 0.1 %
Fig. 13 - Maximum Drain Current vs. Case Temperature Fig. 17a - Switching Time Test Circuit
20 t t t t d(on) r d(off) f VGS 10 % 15 10 90 % V er Dissipation (W) DS w o
Fig. 17b - Switching Time Waveforms
, P 5 DP 0 0 20 40 60 80 100 120 140 91080_14 TC, Case Temperature (°C)
Fig. 14 - Power vs. Temperature Derating Curve
S21-0867-Rev. C, 16-Aug-2021
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