Datasheet IRFP460 (Vishay)
| Fabricante | Vishay |
| Descripción | Power MOSFET in TO-247 package |
| Páginas / Página | 11 / 1 — IRFP460. Power MOSFET. TO-247. FEATURES. Note. PRODUCT SUMMARY. … |
| Formato / tamaño de archivo | PDF / 478 Kb |
| Idioma del documento | Inglés |
IRFP460. Power MOSFET. TO-247. FEATURES. Note. PRODUCT SUMMARY. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
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IRFP460
www.vishay.com Vishay Siliconix
Power MOSFET
D
TO-247 FEATURES
• Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole Available G • Fast switching S • Ease of paralleling D G • Simple drive requirements S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For
PRODUCT SUMMARY
example, parts with lead (Pb) terminations are not RoHS-compliant. VDS (V) 500 Please see the information / tables in this datasheet for details RDS(on) (Ω) VGS = 10 V 0.27
DESCRIPTION
Qg (max.) (nC) 210 Third generation Power MOSFETs from Vishay provide the Qgs (nC) 29 designer with the best combination of fast switching, Qgd (nC) 110 ruggedized device design, low on-resistance and Configuration Single cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247 Lead (Pb)-free IRFP460PbF
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 500 V Gate-source voltage VGS ± 20 TC = 25 °C 20 Continuous drain current VGS at 10 V ID TC = 100 °C 13 A Pulsed drain currenta IDM 80 Linear derating factor 2.2 W/°C Single pulse avalanche energy b EAS 960 mJ Repetitive avalanche current a IAR 20 A Repetitive avalanche energy a EAR 28 mJ Maximum power dissipation TC = 25 °C PD 280 W Peak diode recovery dV/dt c dV/dt 3.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) for 10 s 300 d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12) c. ISD ≤ 20 A, dI/dt ≤ 160 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S22-0058-Rev. B, 31-Jan-2022
1
Document Number: 91237 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET
D
TO-247 FEATURES
• Dynamic dV/dt rating • Repetitive avalanche rated • Isolated central mounting hole Available G • Fast switching S • Ease of paralleling D G • Simple drive requirements S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 N-Channel MOSFET
Note
* This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For
PRODUCT SUMMARY
example, parts with lead (Pb) terminations are not RoHS-compliant. VDS (V) 500 Please see the information / tables in this datasheet for details RDS(on) (Ω) VGS = 10 V 0.27
DESCRIPTION
Qg (max.) (nC) 210 Third generation Power MOSFETs from Vishay provide the Qgs (nC) 29 designer with the best combination of fast switching, Qgd (nC) 110 ruggedized device design, low on-resistance and Configuration Single cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION
Package TO-247 Lead (Pb)-free IRFP460PbF
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 500 V Gate-source voltage VGS ± 20 TC = 25 °C 20 Continuous drain current VGS at 10 V ID TC = 100 °C 13 A Pulsed drain currenta IDM 80 Linear derating factor 2.2 W/°C Single pulse avalanche energy b EAS 960 mJ Repetitive avalanche current a IAR 20 A Repetitive avalanche energy a EAR 28 mJ Maximum power dissipation TC = 25 °C PD 280 W Peak diode recovery dV/dt c dV/dt 3.5 V/ns Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Soldering recommendations (peak temperature) for 10 s 300 d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 4.3 mH, RG = 25 Ω, IAS = 20 A (see fig. 12) c. ISD ≤ 20 A, dI/dt ≤ 160 A/μs, VDD ≤ VDS, TJ ≤ 150 °C d. 1.6 mm from case S22-0058-Rev. B, 31-Jan-2022
1
Document Number: 91237 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000