Datasheet IRFP460 (Vishay) - 2

IRFP460
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.45
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 12 Ab - - 0.27 Ω Forward transconductance gfs VDS = 50 V, ID = 12 Ab 13 - - S
Dynamic
Input capacitance Ciss V - 4200 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 870 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 350 - Total gate charge Qg - - 210 I Gate-source charge Qgs V D = 20 A, VDS = 400 V GS = 10 V - - 29 nC see fig. 6 and 13b Gate-drain charge Qgd - - 110 Turn-on delay time td(on) - 18 - Rise time tr V - 59 - DD = 250 V, ID = 20 A , ns R Turn-off delay time t G = 4.3 Ω, RD = 13 Ω, see fig. 10b d(off) - 110 - Fall time tf - 58 - Internal drain inductance LD Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance LS G - 13 - die contact S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol - - 20 D showing the integral reverse A Pulsed diode forward current a I G SM - - 80 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb - - 1.8 V Body diode reverse recovery time trr - 570 860 ns TJ = 25 °C, IF = 20A, dI/dt = 100 A/μsb Body diode reverse recovery charge Qrr - 5.7 8.6 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S22-0058-Rev. B, 31-Jan-2022
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