Datasheet TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G,TIP32AG, TIP32BG, TIP32CG (PNP) (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | NPN Bipolar Power Transistor in TO-220-3 package |
| Páginas / Página | 7 / 1 — www.onsemi.com. 3 AMPERE. POWER TRANSISTORS. COMPLEMENTARY SILICON. … |
| Formato / tamaño de archivo | PDF / 82 Kb |
| Idioma del documento | Inglés |
www.onsemi.com. 3 AMPERE. POWER TRANSISTORS. COMPLEMENTARY SILICON. Features. 40−60−80−100 VOLTS,. 40 WATTS. PNP. NPN. MAXIMUM RATINGS
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link to page 6 TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G,TIP32AG, TIP32BG, TIP32CG(PNP) Complementary Silicon Plastic Power Transistors
www.onsemi.com
Designed for use in general purpose amplifier and switching
3 AMPERE
applications.
POWER TRANSISTORS COMPLEMENTARY SILICON Features
•
40−60−80−100 VOLTS,
High Current Gain − Bandwidth Product • Compact TO−220 Package
40 WATTS
• These Devices are Pb−Free and are RoHS Compliant*
PNP NPN MAXIMUM RATINGS
COLLECTOR COLLECTOR 2,4 2,4
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO Vdc TIP31G, TIP32G 40 1 1 TIP31AG, TIP32AG 60 BASE BASE TIP31BG, TIP32BG 80 TIP31CG, TIP32CG 100 3 3 Collector−Base Voltage VCB Vdc EMITTER EMITTER TIP31G, TIP32G 40 TIP31AG, TIP32AG 60 TIP31BG, TIP32BG 80 4 TIP31CG, TIP32CG 100 Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous I
TO−220
C 3.0 Adc
CASE 221A
Collector Current − Peak ICM 5.0 Adc
STYLE 1
Base Current IB 1.0 Adc 1 Total Power Dissipation PD 2 @ T 3 C = 25°C 40 W Derate above 25°C 0.32 W/°C
MARKING DIAGRAM
Total Power Dissipation PD @ TA = 25°C 2.0 W Derate above 25°C 0.016 W/°C Unclamped Inductive Load Energy E 32 mJ (Note 1) TIP3xxG Operating and Storage Junction Tem- TJ, Tstg – 65 to + 150 °C AYWW perature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W TIP3xx = Device Code
THERMAL CHARACTERISTICS
xx = 1, 1A, 1B, 1C, 2, 2A, 2B, 2C,
Characteristic Symbol Max Unit
A = Assembly Location Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Y = Year Thermal Resistance, Junction−to−Case R WW = Work Week qJC 3.125 °C/W G Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please
ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2015 − Rev. 16 TIP31A/D
www.onsemi.com
Designed for use in general purpose amplifier and switching
3 AMPERE
applications.
POWER TRANSISTORS COMPLEMENTARY SILICON Features
•
40−60−80−100 VOLTS,
High Current Gain − Bandwidth Product • Compact TO−220 Package
40 WATTS
• These Devices are Pb−Free and are RoHS Compliant*
PNP NPN MAXIMUM RATINGS
COLLECTOR COLLECTOR 2,4 2,4
Rating Symbol Value Unit
Collector − Emitter Voltage VCEO Vdc TIP31G, TIP32G 40 1 1 TIP31AG, TIP32AG 60 BASE BASE TIP31BG, TIP32BG 80 TIP31CG, TIP32CG 100 3 3 Collector−Base Voltage VCB Vdc EMITTER EMITTER TIP31G, TIP32G 40 TIP31AG, TIP32AG 60 TIP31BG, TIP32BG 80 4 TIP31CG, TIP32CG 100 Emitter−Base Voltage VEB 5.0 Vdc Collector Current − Continuous I
TO−220
C 3.0 Adc
CASE 221A
Collector Current − Peak ICM 5.0 Adc
STYLE 1
Base Current IB 1.0 Adc 1 Total Power Dissipation PD 2 @ T 3 C = 25°C 40 W Derate above 25°C 0.32 W/°C
MARKING DIAGRAM
Total Power Dissipation PD @ TA = 25°C 2.0 W Derate above 25°C 0.016 W/°C Unclamped Inductive Load Energy E 32 mJ (Note 1) TIP3xxG Operating and Storage Junction Tem- TJ, Tstg – 65 to + 150 °C AYWW perature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W TIP3xx = Device Code
THERMAL CHARACTERISTICS
xx = 1, 1A, 1B, 1C, 2, 2A, 2B, 2C,
Characteristic Symbol Max Unit
A = Assembly Location Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W Y = Year Thermal Resistance, Junction−to−Case R WW = Work Week qJC 3.125 °C/W G Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please
ORDERING INFORMATION
download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
September, 2015 − Rev. 16 TIP31A/D