Datasheet TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G,TIP32AG, TIP32BG, TIP32CG (PNP) (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | NPN Bipolar Power Transistor in TO-220-3 package |
| Páginas / Página | 7 / 2 — TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,. … |
| Formato / tamaño de archivo | PDF / 82 Kb |
| Idioma del documento | Inglés |
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,. TIP32CG (PNP). ELECTRICAL CHARACTERISTICS. Characteristic
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TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) TIP31G, TIP32G 40 − TIP31AG, TIP32AG 60 − TIP31BG, TIP32BG 80 − TIP31CG, TIP32CG 100 − Collector Cutoff Current ICEO mAdc (VCE = 30 Vdc, IB = 0) TIP31G, TIP32G, TIP31AG, TIP32AG − 0.3 (VCE = 60 Vdc, IB = 0) TIP31BG, TIP31CG, TIP32BG, TIP32CG − 0.3 Collector Cutoff Current ICES mAdc (VCE = 40 Vdc, VEB = 0) TIP31G, TIP32G − 200 (VCE = 60 Vdc, VEB = 0) TIP31AG, TIP32AG − 200 (VCE = 80 Vdc, VEB = 0) TIP31BG, TIP32BG − 200 (VCE = 100 Vdc, VEB = 0) TIP31CG, TIP32CG − 200 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 1.0
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 1.0 Adc, VCE = 4.0 Vdc) 25 − (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50 Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 3.0 Adc, IB = 375 mAdc) − 1.2 Base−Emitter On Voltage VBE(on) Vdc (IC = 3.0 Adc, VCE = 4.0 Vdc) − 1.8
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) 3.0 − Small−Signal Current Gain hfe − (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) 20 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) Vdc (IC = 30 mAdc, IB = 0) TIP31G, TIP32G 40 − TIP31AG, TIP32AG 60 − TIP31BG, TIP32BG 80 − TIP31CG, TIP32CG 100 − Collector Cutoff Current ICEO mAdc (VCE = 30 Vdc, IB = 0) TIP31G, TIP32G, TIP31AG, TIP32AG − 0.3 (VCE = 60 Vdc, IB = 0) TIP31BG, TIP31CG, TIP32BG, TIP32CG − 0.3 Collector Cutoff Current ICES mAdc (VCE = 40 Vdc, VEB = 0) TIP31G, TIP32G − 200 (VCE = 60 Vdc, VEB = 0) TIP31AG, TIP32AG − 200 (VCE = 80 Vdc, VEB = 0) TIP31BG, TIP32BG − 200 (VCE = 100 Vdc, VEB = 0) TIP31CG, TIP32CG − 200 Emitter Cutoff Current IEBO mAdc (VBE = 5.0 Vdc, IC = 0) − 1.0
ON CHARACTERISTICS
(Note 2) DC Current Gain hFE − (IC = 1.0 Adc, VCE = 4.0 Vdc) 25 − (IC = 3.0 Adc, VCE = 4.0 Vdc) 10 50 Collector−Emitter Saturation Voltage VCE(sat) Vdc (IC = 3.0 Adc, IB = 375 mAdc) − 1.2 Base−Emitter On Voltage VBE(on) Vdc (IC = 3.0 Adc, VCE = 4.0 Vdc) − 1.8
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) 3.0 − Small−Signal Current Gain hfe − (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz) 20 − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
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