Datasheet IRF4435TR-VB (VBsemi) - 2

IRF4435TR-VB
www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = -250 µA -30 Typ. Max. Unit Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = -250 µA Gate-Source Threshold Voltage V
-31 mV/°C 4.5 VGS(th) VDS = VGS, ID = -250 µA -2.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = -30 V, VGS = 0 V -1 VDS = -30 V, VGS = 0 V, TJ = 55 °C -5 On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Forward Transconductancea gfs Dynamicb
Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time VDS ≤ -5 V, VGS = -10 V
VGS = -10 V, ID = -7.0 A tr -20 VDS = -15 V, ID = -7.0 A 0.024
18 VDS = -15 V, VGS = 0 V, f = 1 MHz 1455
180 Ω
S pF 145
VDS = -15 V, VGS = -10 V, ID = -7.0 A
VDS = -15 V, VGS = -4.5 V, ID = -7.0 A 25 38 13 20 3.5 VDD = -15 V, RL = 2.7 Ω
ID ≅ -5.6 A, VGEN = -10 V, Rg = 1 Ω 0.4 2.0 4.0 10 20 13 20 23 35 9 18 td(on) 38 57 89 134 tr nC 5.5
f = 1 MHz tf td(off) µA
A 0.018 VGS = -4.5 V, ID = -5.6 A td(on)
td(off) -1.0 VDD = -15 V, RL = 2.7 Ω
ID ≅ -5.6 A, VGEN = -4.5 V, Rg = 1 Ω tf 22 33 11 17 Ω ns Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb -6.5
-30 TC = 25 °C
IS = -5.6 A, VGS = 0 V IF = -5.6 A, dI/dt = 100 A/µs, TJ = 25 °C A -0.71 -1.2 V 22 33 ns 17 26 nC 13
9 ns Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability. 服务热线：400-655-8788 2