Datasheet IRF4435TR-VB (VBsemi) - 5
| Fabricante | VBsemi |
| Descripción | High-performance P-channel MOSFET in SOP8 package |
| Páginas / Página | 9 / 5 — IRF4435TR-VB. www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless … |
| Formato / tamaño de archivo | PDF / 197 Kb |
| Idioma del documento | Inglés |
IRF4435TR-VB. www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted. 10 ID -Drain Current (A) 8 6 4 2 0
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IRF4435TR-VB
www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 ID -Drain Current (A) 8 6 4 2 0
0 25 50 75 100 125 150 T C -Case Temperature (°C) Current Derating*
5 3.0 2.5 4 Power (W) Power (W) 2.0
3 2 1.5 1.0
1 0.5 0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 TC -Case Temperature (°C) TA -Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit. 服务热线：400-655-8788
5
www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10 ID -Drain Current (A) 8 6 4 2 0
0 25 50 75 100 125 150 T C -Case Temperature (°C) Current Derating*
5 3.0 2.5 4 Power (W) Power (W) 2.0
3 2 1.5 1.0
1 0.5 0 0.0
0 25 50 75 100 125 150 0 25 50 75 100 125 TC -Case Temperature (°C) TA -Ambient Temperature (°C) Power, Junction-to-Foot Power Derating, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit. 服务热线：400-655-8788
5