Datasheet IRF4435TR-VB (VBsemi) - 6

FabricanteVBsemi
DescripciónHigh-performance P-channel MOSFET in SOP8 package
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IRF4435TR-VB. www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted. 1 Normalized Effective Transient

IRF4435TR-VB www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient

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IRF4435TR-VB
www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1 Normalized Effective Transient
Thermal Impedance Duty Cycle = 0.5 0.2
0.1 Notes: 0.1 PDM 0.05 t1
t2
1. Duty Cycle, D = t1
t2
2. Per Unit Base = RthJA = 75 °C/W 0.02 3. TJM -TA = PDMZthJA(t) Single Pulse
0.01
10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient
Thermal Impedance Duty Cycle = 0.5 0.2
0.1
0.1
0.05
0.02 Single Pulse
0.01
10 -4 10 -3 10 -2
10 -1
Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot 服务热线:400-655-8788 6