Datasheet ES1JV (Rectron Semiconductor) - 3
| Fabricante | Rectron Semiconductor |
| Descripción | Recovery Rectifiers 1.0 A in DO-214AC package |
| Páginas / Página | 8 / 3 — RATING AND CHARACTERISTICS CURVES ( ES1AV THRU ES1JV ) |
| Formato / tamaño de archivo | PDF / 219 Kb |
| Idioma del documento | Inglés |
RATING AND CHARACTERISTICS CURVES ( ES1AV THRU ES1JV )
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RATING AND CHARACTERISTICS CURVES ( ES1AV THRU ES1JV )
20 200 10 8.3ms Single Half Sine-Wave , (A) T T (JEDED Method) J = 25 OC 100 3.0 1.0 ES1J 30 ES1E~ES1G 0.3 20 ARD SURGE CURREN 0.1 W ES1A~ES1D 15 0.03 Pulse Width=300uS 1% Duty Cycle PEAK FOR INSTANTANEOUS FORWARD CURRENT, (A) 0.01 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 5 10 50 100 INSTANTANEOUS FORWARD VOLTAGE, (V) NUMBER OF CYCLES AT 60Hz FIG.4 MAXIM UM INSTANTANEOU S FORWARD FIG.5 MAXIMUM NON-REPETITIVE FORWARD CHARACTERISTICS SURGE CURRENT 200 TJ = 25 OC ) 100 F 60 40 ES1A~ES1D 20 ACITANCE, (p A 10 N IPOC 6 ES1E~ES1J CT 4 N JU 2 1 0.2 0.4 2 4 10 20 40 100 REVERSE VOLTAGE, (V) FIG.6 TYPICAL JUNCTION CAPACITANCE
20 200 10 8.3ms Single Half Sine-Wave , (A) T T (JEDED Method) J = 25 OC 100 3.0 1.0 ES1J 30 ES1E~ES1G 0.3 20 ARD SURGE CURREN 0.1 W ES1A~ES1D 15 0.03 Pulse Width=300uS 1% Duty Cycle PEAK FOR INSTANTANEOUS FORWARD CURRENT, (A) 0.01 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 5 10 50 100 INSTANTANEOUS FORWARD VOLTAGE, (V) NUMBER OF CYCLES AT 60Hz FIG.4 MAXIM UM INSTANTANEOU S FORWARD FIG.5 MAXIMUM NON-REPETITIVE FORWARD CHARACTERISTICS SURGE CURRENT 200 TJ = 25 OC ) 100 F 60 40 ES1A~ES1D 20 ACITANCE, (p A 10 N IPOC 6 ES1E~ES1J CT 4 N JU 2 1 0.2 0.4 2 4 10 20 40 100 REVERSE VOLTAGE, (V) FIG.6 TYPICAL JUNCTION CAPACITANCE