Datasheet AOD240 (Alpha & Omega)
| Fabricante | Alpha & Omega |
| Descripción | 40V N-Channel MOSFET in TO252 package |
| Páginas / Página | 6 / 1 — AOD240. 40V N-Channel MOSFET. General Description. Product Summary. … |
| Formato / tamaño de archivo | PDF / 506 Kb |
| Idioma del documento | Inglés |
AOD240. 40V N-Channel MOSFET. General Description. Product Summary. TO252. DPAK. Top View. Bottom View
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AOD240 40V N-Channel MOSFET General Description Product Summary
V The AOD240 uses Trench MOSFET technology that DS 40V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 70A frequency switching performance. Power losses are RDS(ON) (at VGS=10V) < 3mW minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 3.9mW RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. 100% UIS Tested 100% Rg Tested
TO252 DPAK
D
Top View Bottom View
D D G S G S G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain TC=25°C 70 ID Current G TC=100°C 55 A Pulsed Drain Current C IDM 300 Continuous Drain TA=25°C 23 IDSM A Current TA=70°C 18 Avalanche Current C IAS, IAR 68 A Avalanche energy L=0.1mH C EAS, EAR 231 mJ TC=25°C 150 PD W Power Dissipation B TC=100°C 75 TA=25°C 2.7 PDSM W Power Dissipation A TA=70°C 1.7 Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C
Thermal Characteristics Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14.2 17 °C/W Rq Maximum Junction-to-Ambient A D JA Steady-State 39 47 °C/W Maximum Junction-to-Case Steady-State RqJC 0.8 1 °C/W Rev 1.0: September 2023
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V The AOD240 uses Trench MOSFET technology that DS 40V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 70A frequency switching performance. Power losses are RDS(ON) (at VGS=10V) < 3mW minimized due to an extremely low combination of RDS(ON) (at VGS = 4.5V) < 3.9mW RDS(ON) and Crss.In addition, switching behavior is well controlled with a “Schottky style” soft recovery body diode. 100% UIS Tested 100% Rg Tested
TO252 DPAK
D
Top View Bottom View
D D G S G S G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Units
Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain TC=25°C 70 ID Current G TC=100°C 55 A Pulsed Drain Current C IDM 300 Continuous Drain TA=25°C 23 IDSM A Current TA=70°C 18 Avalanche Current C IAS, IAR 68 A Avalanche energy L=0.1mH C EAS, EAR 231 mJ TC=25°C 150 PD W Power Dissipation B TC=100°C 75 TA=25°C 2.7 PDSM W Power Dissipation A TA=70°C 1.7 Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C
Thermal Characteristics Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 14.2 17 °C/W Rq Maximum Junction-to-Ambient A D JA Steady-State 39 47 °C/W Maximum Junction-to-Case Steady-State RqJC 0.8 1 °C/W Rev 1.0: September 2023
www.aosmd.com
Page 1 of 6