Datasheet AOD240 (Alpha & Omega) - 2

AOD240 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS
BV I DSS Drain-Source Breakdown Voltage D=250mA, VGS=0V 40 V VDS=30V, VGS=0V 1 I Zero Gate Voltage Drain Current m DSS A TJ=55°C 5 I Gate-Body leakage current V GSS DS=0V, VGS= ±20V 100 nA V V GS(th) Gate Threshold Voltage DS=VGS ID=250mA 1 1.7 2.2 V I V D(ON) On state drain current GS=10V, VDS=5V 300 A VGS=10V, ID=20A 2.4 3 mW RDS(ON) Static Drain-Source On-Resistance TJ=125°C 3.7 4.8 VGS=4.5V, ID=20A 2.95 3.9 mW g Forward Transconductance V FS DS=5V, ID=20A 78 S V Diode Forward Voltage I SD S=1A,VGS=0V 0.65 1 V IS Maximum Body-Diode Continuous CurrentG 70 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 2800 3510 4300 pF C Output Capacitance V oss GS=0V, VDS=20V, f=1MHz 760 1070 1420 pF Crss Reverse Transfer Capacitance 50 68 155 pF Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 1 1.5 W
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 39 49 60 nC Qg(4.5V) Total Gate Charge 17 22 27 nC VGS=10V, VDS=20V, ID=20A Qgs Gate Source Charge 7 9 11 nC Qgd Gate Drain Charge 4 7 10 nC tD(on) Turn-On DelayTime 11 ns tr Turn-On Rise Time V 10 ns GS=10V, VDS=20V, RL=1W, t Turn-Off DelayTime R D(off) GEN=3W 38 ns tf Turn-Off Fall Time 11 ns trr I Body Diode Reverse Recovery Time F=20A, dI/dt=500A/ms 14 21 28 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/ms 40 58 76 nC A. The value of Rq is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150°C. The value in any given application depends on DSM qJA the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P is based on T =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T =175°C. Ratings are based on low frequency and duty cycles to keep initial J(MAX) T =25°C. J D. The Rq is the sum of the thermal impedence from junction to case R and case to ambient. JA qJC E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175°C. The SOA curve provides a single pulse rating. J(MAX) G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T =25°C. A APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO MAKE CHANGES TO PRODUCT SPECIFICATIONS WITHOUT NOTICE. IT IS THE RESPONSIBILITY OF THE CUSTOMER TO EVALUATE SUITABILITY OF THE PRODUCT FOR THEIR INTENDED APPLICATION. CUSTOMER SHALL COMPLY WITH APPLICABLE LEGAL REQUIREMENTS, INCLUDING ALL APPLICABLE EXPORT CONTROL RULES, REGULATIONS AND LIMITATIONS. AOS' products are provided subject to AOS' terms and conditions of sale which are set forth at: http://www.aosmd.com/terms_and_conditions_of_sale Rev 1.0: September 2023
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