Philips SemiconductorsProduct specificationNPN medium power transistor2N1613FEATURESPINNING • Low current (max. 500 mA) PINDESCRIPTION • Low voltage (max. 50 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case • High-speed switching and amplification. DESCRIPTION handbook, halfpage 1 3 2 NPN medium power transistor in a TO-39 metal package. 2 3 1 MAM317 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATASYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V ICM peak collector current − 1 A Ptot total power dissipation Tamb ≤ 25 °C − 0.8 W hFE DC current gain IC = 150 mA; VCE = 10 V 40 120 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 60 − MHz 1997 Apr 11 2 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT5/11 DEFINITIONS LIFE SUPPORT APPLICATIONS