Datasheet 2N1613 (Philips) - 2

FabricantePhilips
DescripciónNPN medium power transistor in TO-39 package
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Philips Semiconductors. Product specification. NPN medium power transistor. 2N1613. FEATURES. PINNING. PIN. DESCRIPTION. APPLICATIONS

Philips Semiconductors Product specification NPN medium power transistor 2N1613 FEATURES PINNING PIN DESCRIPTION APPLICATIONS

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Philips Semiconductors Product specification NPN medium power transistor 2N1613 FEATURES PINNING
• Low current (max. 500 mA)
PIN DESCRIPTION
• Low voltage (max. 50 V). 1 emitter 2 base
APPLICATIONS
3 collector, connected to case • High-speed switching and amplification.
DESCRIPTION
handbook, halfpage
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NPN medium power transistor in a TO-39 metal package. 2
3
1 MAM317 Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 75 V VCEO collector-emitter voltage open base − 50 V ICM peak collector current − 1 A Ptot total power dissipation Tamb ≤ 25 °C − 0.8 W hFE DC current gain IC = 150 mA; VCE = 10 V 40 120 fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 60 − MHz 1997 Apr 11 2 Document Outline FEATURES APPLICATIONS DESCRIPTION PINNING QUICK REFERENCE DATA LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT5/11 DEFINITIONS LIFE SUPPORT APPLICATIONS