Datasheet EPC2218 (Efficient Power Conversion) - 3
| Fabricante | Efficient Power Conversion |
| Descripción | 100 V, 231 A Enhancement-Mode GaN Power Transistor |
| Páginas / Página | 7 / 3 — eGaN® FET DATASHEET. Figure 5a: Typical Capacitance (Linear Scale). … |
| Formato / tamaño de archivo | PDF / 1.3 Mb |
| Idioma del documento | Inglés |
eGaN® FET DATASHEET. Figure 5a: Typical Capacitance (Linear Scale). Figure 5b: Typical Capacitance (Log Scale)
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eGaN® FET DATASHEET
EPC2218
Figure 5a: Typical Capacitance (Linear Scale) Figure 5b: Typical Capacitance (Log Scale)
1600 10000 1400 1200 1000 1000 COSS = CGD + CSD CISS = CGD + CGS 800 C 100 C RSS = CGD OSS = CGD + CSD CISS = CGD + CGS
Capacitance (pF)
600
Capacitance (pF)
CRSS = CGD 400 10 200 00 25 50 75 100 1 0 25 50 75 100
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Typical Output Charge and C Figure 7: Typical Gate Charge OSS Stored Energy
80 3.0 5 I 64 2.4 D = 25 A
)
4 V
µJ
DS = 50 V 48 1.8 3
Output Charge (nC) Stored Energy (
32 1.2 2
– C OSS – Gate-to-Source Voltage (V) Q OSS – E OSS
16 0.6
V GS
1 0 0.0 0 20 40 60 80 100 0 0 2 4 6 8 10
VDS – Drain-to-Source Voltage (V) QG – Gate Charge (nC) Figure 8: Typical Reverse Drain-Source Characteristics* Figure 9: Typical Normalized On-State Resistance vs. Temp.
2.0 300 25˚C I 125˚C D = 25 A 250
DS(on)
1.8 VGS = 5 V VGS = 0 V 200 1.6 150 1.4 100 1.2
– Source-to-Drain Current (A) I SD
50
Normalized On-State Resistance R
1.0 0 0.8 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
Note: Negative gate drive voltage increases the reverse drain-source voltage. EPC recommends 0 V for OFF. * Generated based on a pulse width of 300 µs. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information:
info@epc-co.com
| 3
EPC2218
Figure 5a: Typical Capacitance (Linear Scale) Figure 5b: Typical Capacitance (Log Scale)
1600 10000 1400 1200 1000 1000 COSS = CGD + CSD CISS = CGD + CGS 800 C 100 C RSS = CGD OSS = CGD + CSD CISS = CGD + CGS
Capacitance (pF)
600
Capacitance (pF)
CRSS = CGD 400 10 200 00 25 50 75 100 1 0 25 50 75 100
VDS – Drain-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) Figure 6: Typical Output Charge and C Figure 7: Typical Gate Charge OSS Stored Energy
80 3.0 5 I 64 2.4 D = 25 A
)
4 V
µJ
DS = 50 V 48 1.8 3
Output Charge (nC) Stored Energy (
32 1.2 2
– C OSS – Gate-to-Source Voltage (V) Q OSS – E OSS
16 0.6
V GS
1 0 0.0 0 20 40 60 80 100 0 0 2 4 6 8 10
VDS – Drain-to-Source Voltage (V) QG – Gate Charge (nC) Figure 8: Typical Reverse Drain-Source Characteristics* Figure 9: Typical Normalized On-State Resistance vs. Temp.
2.0 300 25˚C I 125˚C D = 25 A 250
DS(on)
1.8 VGS = 5 V VGS = 0 V 200 1.6 150 1.4 100 1.2
– Source-to-Drain Current (A) I SD
50
Normalized On-State Resistance R
1.0 0 0.8 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
Note: Negative gate drive voltage increases the reverse drain-source voltage. EPC recommends 0 V for OFF. * Generated based on a pulse width of 300 µs. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information:
info@epc-co.com
| 3