Datasheet EPC23108 (Efficient Power Conversion) - 6
| Fabricante | Efficient Power Conversion |
| Descripción | 100V, 35 A ePower Stage IC |
| Páginas / Página | 17 / 6 — eGaN® IC DATASHEET. Dynamic Characteristics Parameter Definition |
| Formato / tamaño de archivo | PDF / 2.0 Mb |
| Idioma del documento | Inglés |
eGaN® IC DATASHEET. Dynamic Characteristics Parameter Definition
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eGaN® IC DATASHEET
EPC23108
Dynamic Characteristics Parameter Definition Figure 3: Logic Input to Output Switching Node Timing Diagram (current exiting from SW node)
5 V
HS
50%
IN LS
5 V
IN
50% t_delay ~48 V HS_off ~700 mV
SW
~0 V ~700 mV t_delayLS_off t_delayHS_on t_delayLS_on
Output Capacitance vs. Drain to Source Voltage Figure 4a: COSS_HSFET of High-Side Power GaN FET Figure 4b: COSS_LSFET of Low-Side Power GaN FET EPC23102 Typical C EPC23102 Typical C
1500
OSS High-Side
1500
OSS Low-Side
1250 1250 1000 1000 750 750
Capacitance (pF) Capacitance (pF)
500 500 250 250 0 0 0 25 50 75 100 0 25 50 75 100
VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information: info@epc-co.com | 6
EPC23108
Dynamic Characteristics Parameter Definition Figure 3: Logic Input to Output Switching Node Timing Diagram (current exiting from SW node)
5 V
HS
50%
IN LS
5 V
IN
50% t_delay ~48 V HS_off ~700 mV
SW
~0 V ~700 mV t_delayLS_off t_delayHS_on t_delayLS_on
Output Capacitance vs. Drain to Source Voltage Figure 4a: COSS_HSFET of High-Side Power GaN FET Figure 4b: COSS_LSFET of Low-Side Power GaN FET EPC23102 Typical C EPC23102 Typical C
1500
OSS High-Side
1500
OSS Low-Side
1250 1250 1000 1000 750 750
Capacitance (pF) Capacitance (pF)
500 500 250 250 0 0 0 25 50 75 100 0 25 50 75 100
VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V)
EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information: info@epc-co.com | 6