Datasheet 2SK2350 (Inchange Semiconductor)
| Fabricante | Inchange Semiconductor |
| Descripción | N-Channel MOSFET Transistor in TO-220F package |
| Páginas / Página | 2 / 1 — INCHANGE Semiconductor. isc Product Specification. isc N-Channel MOSFET … |
| Formato / tamaño de archivo | PDF / 89 Kb |
| Idioma del documento | Inglés |
INCHANGE Semiconductor. isc Product Specification. isc N-Channel MOSFET Transistor. 2SK2350. DESCRIPTION. APPLICATIONS
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INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2350 DESCRIPTION
·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed
APPLICATIONS
·Switching Regulators ·DC-DC Converter, ·Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT
VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8.5 A ID(puls) Pulsed Drain Current 34 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 4.16 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
· isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark
·Drain Current ID= 8.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed
APPLICATIONS
·Switching Regulators ·DC-DC Converter, ·Motor Control
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT
VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8.5 A ID(puls) Pulsed Drain Current 34 A Ptot Total Dissipation@TC=25℃ 30 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 4.16 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
· isc website：www.iscsemi.cn
1
isc & iscsemi is registered trademark