Datasheet 2SK2350 (Inchange Semiconductor) - 2
| Fabricante | Inchange Semiconductor |
| Descripción | N-Channel MOSFET Transistor in TO-220F package |
| Páginas / Página | 2 / 2 — INCHANGE Semiconductor. isc Product Specification. isc N-Channel Mosfet … |
| Formato / tamaño de archivo | PDF / 89 Kb |
| Idioma del documento | Inglés |
INCHANGE Semiconductor. isc Product Specification. isc N-Channel Mosfet Transistor. 2SK2350
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INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor 2SK2350 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 200 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA 1.5 3.5 V VSD Diode Forward On-Voltage IS=10A ;VGS= 0 2.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A 0.26 0.4 Ω IGSS Gate-Body Leakage Current VGS= ±16V;VDS= 0 ±10 µA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 100 µA Ciss Input Capacitance 700 VDS=10V; VGS=0V; Crss Reverse Transfer Capacitance 80 pF fT=1MHz Coss Output Capacitance 270 tr Rise Time 15 VGS=10V; t I on Turn-on Time D=5A; 25 V ns DD=100V; tf Fall Time 15 RL=20Ω toff Turn-off Time 70
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V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 10mA 200 V VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA 1.5 3.5 V VSD Diode Forward On-Voltage IS=10A ;VGS= 0 2.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 5A 0.26 0.4 Ω IGSS Gate-Body Leakage Current VGS= ±16V;VDS= 0 ±10 µA IDSS Zero Gate Voltage Drain Current VDS= 200V; VGS= 0 100 µA Ciss Input Capacitance 700 VDS=10V; VGS=0V; Crss Reverse Transfer Capacitance 80 pF fT=1MHz Coss Output Capacitance 270 tr Rise Time 15 VGS=10V; t I on Turn-on Time D=5A; 25 V ns DD=100V; tf Fall Time 15 RL=20Ω toff Turn-off Time 70
isc website：www.iscsemi.cn
2
isc & iscsemi is registered trademark