Datasheet Si2333DS (Vishay) - 2
| Fabricante | Vishay |
| Descripción | P-Channel 12-V (D-S) MOSFET in SOT-23 (TO-236) package |
| Páginas / Página | 8 / 2 — Si2333DS. SPECIFICATIONS. Limits. Parameter Symbol. Test. Conditions. … |
| Formato / tamaño de archivo | PDF / 160 Kb |
| Idioma del documento | Inglés |
Si2333DS. SPECIFICATIONS. Limits. Parameter Symbol. Test. Conditions. Min. Typ. Max. Unit. Static. Dynamicb. Switchingc
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Si2333DS
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 12 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.40 - 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 9.6 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 9.6 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta I ≤ D(on) VDS - 5 V, VGS = - 4.5 V - 20 A VGS = - 4.5 V, ID = - 5.3 A 0.025 0.032 Drain-Source On-Resistancea RDS(on) VGS = - 2.5 V, ID = - 4.6 A 0.033 0.042 Ω VGS = - 1.8 V, ID = - 2.0 A 0.046 0.059 Forward Transconductancea gfs VDS = - 5 V, ID = - 5.3 A 17 S Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.7 - 1.2 V
Dynamicb
Total Gate Charge Qg 11.5 18 VDS = - 6 V, VGS = - 4.5 V Gate-Source Charge Qgs 1.5 nC I ≅ D - 5.3 A Gate-Drain Charge Qgd 3.2 Input Capacitance Ciss 1100 Output Capacitance C V oss DS = - 6 V, VGS = 0 V, f = 1 MHz 390 pF Reverse Transfer Capacitance Crss 300
Switchingc
td(on) 25 40 Turn-On Time VDD = - 6 V, RL = 6 Ω tr 45 70 ID ≅ - 1.0 A, VGEN = - 4.5 V ns td(off) 72 110 R Turn-Off Time G = 6 Ω tf 60 90 Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72023 2 S09-0130-Rev. C, 02-Feb-09
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 12 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.40 - 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA VDS = - 9.6 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 9.6 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta I ≤ D(on) VDS - 5 V, VGS = - 4.5 V - 20 A VGS = - 4.5 V, ID = - 5.3 A 0.025 0.032 Drain-Source On-Resistancea RDS(on) VGS = - 2.5 V, ID = - 4.6 A 0.033 0.042 Ω VGS = - 1.8 V, ID = - 2.0 A 0.046 0.059 Forward Transconductancea gfs VDS = - 5 V, ID = - 5.3 A 17 S Diode Forward Voltage VSD IS = - 1.0 A, VGS = 0 V - 0.7 - 1.2 V
Dynamicb
Total Gate Charge Qg 11.5 18 VDS = - 6 V, VGS = - 4.5 V Gate-Source Charge Qgs 1.5 nC I ≅ D - 5.3 A Gate-Drain Charge Qgd 3.2 Input Capacitance Ciss 1100 Output Capacitance C V oss DS = - 6 V, VGS = 0 V, f = 1 MHz 390 pF Reverse Transfer Capacitance Crss 300
Switchingc
td(on) 25 40 Turn-On Time VDD = - 6 V, RL = 6 Ω tr 45 70 ID ≅ - 1.0 A, VGEN = - 4.5 V ns td(off) 72 110 R Turn-Off Time G = 6 Ω tf 60 90 Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For design aid only, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72023 2 S09-0130-Rev. C, 02-Feb-09