Datasheet PMV30UN (Nexperia) - 4

FabricanteNexperia
DescripciónN-channel TrenchMOS ultra low level FET in SOT23 package
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Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Thermal characteristics. Table 3:. Symbol Parameter. Conditions

Philips Semiconductors PMV30UN TrenchMOS™ ultra low level FET Thermal characteristics Table 3: Symbol Parameter Conditions

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Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET 4. Thermal characteristics Table 3: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit
Rth(j-sp) thermal resistance from junction to solder point Figure 4 - - 65 K/W
4.1 Transient thermal impedance
03am32 102 Zth(j-sp) (K/W) δ = 0.5 0.2 10 0.1 0.05 tp P δ = 0.02 T single pulse tp t T 1 10-4 10-3 10-2 10-1 1 10 tp (s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration.
9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 4 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks