Datasheet PMV30UN (Nexperia) - 5
| Fabricante | Nexperia |
| Descripción | N-channel TrenchMOS ultra low level FET in SOT23 package |
| Páginas / Página | 12 / 5 — Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. … |
| Formato / tamaño de archivo | PDF / 244 Kb |
| Idioma del documento | Inglés |
Philips Semiconductors. PMV30UN. TrenchMOS™ ultra low level FET. Characteristics. Table 4:. Symbol Parameter. Conditions. Min. Typ. Max
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Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET 5. Characteristics Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V Tj = 25 °C 20 - - V Tj = −55 °C 18 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C 0.45 0.7 - V Tj = 150 °C 0.25 0.4 - V IDSS drain-source leakage current VDS = 20 V; VGS = 0 V Tj = 25 °C - - 1 µA Tj = 150 °C - - 100 µA IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 2 A; Figure 7 and 8 Tj = 25 °C - 30 36 mΩ Tj = 150 °C - 48 57.6 mΩ VGS = 2.5 V; ID = 1.5 A; Figure 7 and 8 - 36 43 mΩ VGS = 1.8 V; ID = 1 A; Figure 7 and 8 - 44 63 mΩ
Dynamic characteristics
Qg(tot) total gate charge ID = 5 A; VDD = 10 V; VGS = 4.5 V; Figure 13 - 7.4 - nC Qgs gate-source charge - 1.2 - nC Qgd gate-drain (Miller) charge - 1.8 - nC Ciss input capacitance VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11 - 460 - pF Coss output capacitance - 100 - pF Crss reverse transfer capacitance - 70 - pF td(on) turn-on delay time VDD = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω - 7 - ns tr rise time - 13 - ns td(off) turn-off delay time - 53 - ns tf fall time - 13 - ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 1.7 A; VGS = 0 V; Figure 12 - 0.81 1.2 V 9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 5 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks
Philips Semiconductors PMV30UN
µ
TrenchMOS™ ultra low level FET 5. Characteristics Table 4: Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit Static characteristics
V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V Tj = 25 °C 20 - - V Tj = −55 °C 18 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 °C 0.45 0.7 - V Tj = 150 °C 0.25 0.4 - V IDSS drain-source leakage current VDS = 20 V; VGS = 0 V Tj = 25 °C - - 1 µA Tj = 150 °C - - 100 µA IGSS gate-source leakage current VGS = ±8 V; VDS = 0 V - 10 100 nA RDSon drain-source on-state resistance VGS = 4.5 V; ID = 2 A; Figure 7 and 8 Tj = 25 °C - 30 36 mΩ Tj = 150 °C - 48 57.6 mΩ VGS = 2.5 V; ID = 1.5 A; Figure 7 and 8 - 36 43 mΩ VGS = 1.8 V; ID = 1 A; Figure 7 and 8 - 44 63 mΩ
Dynamic characteristics
Qg(tot) total gate charge ID = 5 A; VDD = 10 V; VGS = 4.5 V; Figure 13 - 7.4 - nC Qgs gate-source charge - 1.2 - nC Qgd gate-drain (Miller) charge - 1.8 - nC Ciss input capacitance VGS = 0 V; VDS = 20 V; f = 1 MHz; Figure 11 - 460 - pF Coss output capacitance - 100 - pF Crss reverse transfer capacitance - 70 - pF td(on) turn-on delay time VDD = 10 V; RL = 10 Ω; VGS = 4.5 V; RG = 6 Ω - 7 - ns tr rise time - 13 - ns td(off) turn-off delay time - 53 - ns tf fall time - 13 - ns
Source-drain diode
VSD source-drain (diode forward) voltage IS = 1.7 A; VGS = 0 V; Figure 12 - 0.81 1.2 V 9397 750 11569 © Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data Rev. 01 — 25 June 2003 5 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Limiting values 4. Thermal characteristics 4.1 Transient thermal impedance 5. Characteristics 6. Package outline SOT23 7. Revision history 8. Data sheet status 9. Definitions 10. Disclaimers 11. Trademarks