Datasheet IRFD024 (Vishay) - 2
| Fabricante | Vishay |
| Descripción | N-Channel Power MOSFET |
| Páginas / Página | 9 / 2 — IRFD024. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. … |
| Formato / tamaño de archivo | PDF / 425 Kb |
| Idioma del documento | Inglés |
IRFD024. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. TYP. MAX. UNIT. Static. Dynamic. Drain-Source Body Diode Characteristics
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IRFD024
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.061 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 60 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 1.5 A b - - 0.10 Ω Forward transconductance gfs VDS = 25 V, ID = 1.5 A b 0.90 - - S
Dynamic
Input capacitance Ciss V - 640 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 360 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 79 - Total gate charge Qg - - 25 I Gate-source charge Qgs V D = 17 A, VDS = 48 V, GS = 10 V - - 5.8 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 11 Turn-on delay time td(on) - 13 - Rise time tr - 58 - VDD = 30 V, ID = 17 A, ns Turn-off delay time td(off) Rg = 18 Ω, RD = 1.7Ω, see fig. 1 0b - 25 - Fall time tf - 42 - Between lead, D Internal drain inductance LD - 4.0 - 6 mm (0.25") from package and center of nH G die contact Internal source inductance LS - 6.0 - S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I MOSFET symbol S D - - 2.5 showing the A integral reverse G Pulsed diode forward currenta ISM p - n junction diode S - - 20 Body diode voltage VSD TJ = 25 °C, IS = 2.5 A, VGS = 0 V b - - 1.5 V Body diode reverse recovery time trr - 80 180 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.29 0.64 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0885-Rev. D, 30-Aug-2021
2
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 60 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.061 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 60 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 1.5 A b - - 0.10 Ω Forward transconductance gfs VDS = 25 V, ID = 1.5 A b 0.90 - - S
Dynamic
Input capacitance Ciss V - 640 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 360 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 79 - Total gate charge Qg - - 25 I Gate-source charge Qgs V D = 17 A, VDS = 48 V, GS = 10 V - - 5.8 nC see fig. 6 and 13 b Gate-drain charge Qgd - - 11 Turn-on delay time td(on) - 13 - Rise time tr - 58 - VDD = 30 V, ID = 17 A, ns Turn-off delay time td(off) Rg = 18 Ω, RD = 1.7Ω, see fig. 1 0b - 25 - Fall time tf - 42 - Between lead, D Internal drain inductance LD - 4.0 - 6 mm (0.25") from package and center of nH G die contact Internal source inductance LS - 6.0 - S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I MOSFET symbol S D - - 2.5 showing the A integral reverse G Pulsed diode forward currenta ISM p - n junction diode S - - 20 Body diode voltage VSD TJ = 25 °C, IS = 2.5 A, VGS = 0 V b - - 1.5 V Body diode reverse recovery time trr - 80 180 ns TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μs b Body diode reverse recovery charge Qrr - 0.29 0.64 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S21-0885-Rev. D, 30-Aug-2021
2
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000