Datasheet Si7850DP (Vishay) - 2

Si7850DP
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TJ = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage V(BR)DSS VGS = 0 V, ID = 250 μA 60 - - V Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1 - 3 Gate-body leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VDS = 60 V, VGS = 0 V - - 1 Zero gate voltage drain current IDSS μA VDS = 60 V, VGS = 0 V, TJ = 55 °C - - 20 On-state drain current a I  D(on) VDS 5 V, VGS = 10 V 40 - - A VGS = 10 V, ID = 10.3 A - 0.018 0.022 Drain-source on-state resistance a R DS(on) VGS = 4.5 V, ID = 8.7 A - 0.025 0.031 Forward transconductance a gfs VDS = 15 V, ID = 10.3 A - 26 - S Diode forward voltage a VSD IS = 3.8 A, VGS = 0 V - 0.85 1.2 V
Dynamic b
Total gate charge Qg - 18 27 Gate-source charge Qgs VDS = 30 V, VGS = 10 V, ID = 10.3 A - 3.4 - nC Gate-drain charge Qgd - 5.3 - Gate resistance Rg 0.5 1.4 2.2 Turn-on delay time td(on) - 10 20 Rise time tr V - 10 20 DD = 30 V, RL = 30 I Turn-off delay time t D  1 A, VGEN = 10 V, Rg = 6 d(off) - 25 50 ns Fall time tf - 12 24 Source-drain reverse recovery time trr IF = 3.8 A, di/dt = 100 A/μs - 50 80
Notes
a. Pulse test: pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S09-0227-Rev. E, 09-Feb-09
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