Datasheet Si7850DP (Vishay) - 3
| Fabricante | Vishay |
| Descripción | N-Channel 60 V (D-S) Fast Switching MOSFET in PowerPAK SO-8 package |
| Páginas / Página | 12 / 3 — Si7850DP. TYPICAL CHARACTERISTICS. Output Characteristics. Gate Charge. … |
| Formato / tamaño de archivo | PDF / 369 Kb |
| Idioma del documento | Inglés |
Si7850DP. TYPICAL CHARACTERISTICS. Output Characteristics. Gate Charge. Transfer Characteristics
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Si7850DP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 40 10 V V GS = 10 V thru 5 V DS = 30 V 32 8 ID = 10.3 A ltage (V) o V 24 6 4 V ain Current (A) 16 4 - Dr I D - Gate-to-Source 8 GS 2 V 3 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Output Characteristics Gate Charge
40 50 32 TJ = 150 °C TJ = 25 °C 24 10 ain Current (A) 16 - Dr - Source Current (A) I D TC = 150 °C I S 8 25 °C - 55 °C 0 1 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V)
Transfer Characteristics Source-Drain Diode Forward Voltage
0.06 1400 1200 0.05 ) ( 1000 C 0.04 iss VGS = 4.5 V 800 esistance 0.03 -R 600 - On V 0.02 GS = 10 V - Capacitance (pF) C 400 DS(on)R Coss 0.01 200 Crss 0.00 0 0 8 16 24 32 40 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
S09-0227-Rev. E, 09-Feb-09
3
Document Number: 71625 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 40 10 V V GS = 10 V thru 5 V DS = 30 V 32 8 ID = 10.3 A ltage (V) o V 24 6 4 V ain Current (A) 16 4 - Dr I D - Gate-to-Source 8 GS 2 V 3 V 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
Output Characteristics Gate Charge
40 50 32 TJ = 150 °C TJ = 25 °C 24 10 ain Current (A) 16 - Dr - Source Current (A) I D TC = 150 °C I S 8 25 °C - 55 °C 0 1 0 1 2 3 4 5 0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V)
Transfer Characteristics Source-Drain Diode Forward Voltage
0.06 1400 1200 0.05 ) ( 1000 C 0.04 iss VGS = 4.5 V 800 esistance 0.03 -R 600 - On V 0.02 GS = 10 V - Capacitance (pF) C 400 DS(on)R Coss 0.01 200 Crss 0.00 0 0 8 16 24 32 40 0 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
S09-0227-Rev. E, 09-Feb-09
3
Document Number: 71625 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000