Datasheet IRFP450N (Vishay) - 7
| Fabricante | Vishay |
| Descripción | Power MOSFET in TO-247 package |
| Páginas / Página | 8 / 7 — IRFP450N, SiHFP450N. Peak Diode Recovery dV/dt Test Circuit. D.U.T. Fig. … |
| Formato / tamaño de archivo | PDF / 187 Kb |
| Idioma del documento | Inglés |
IRFP450N, SiHFP450N. Peak Diode Recovery dV/dt Test Circuit. D.U.T. Fig. 14 - For N-Channel
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IRFP450N, SiHFP450N
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
D.U.T
• Low stray inductance • Ground plane • Low leakage inductance current transformer - + - + - RG • dV/dt controlled by R + G • Driver same type as D.U.T. V - DD • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D = P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery Body diode forward current current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91232. Document Number: 91232 www.vishay.com S-Pending-Rev. b, 26-Jun-08 7 Document Outline Datasheet Disclaimer
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+ Circuit layout considerations
D.U.T
• Low stray inductance • Ground plane • Low leakage inductance current transformer - + - + - RG • dV/dt controlled by R + G • Driver same type as D.U.T. V - DD • ISD controlled by duty factor "D" • D.U.T. - device under test Driver gate drive P.W. Period D = P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery Body diode forward current current dI/dt D.U.T. VDS waveform Diode recovery dV/dt VDD Re-applied voltage Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91232. Document Number: 91232 www.vishay.com S-Pending-Rev. b, 26-Jun-08 7 Document Outline Datasheet Disclaimer