Datasheet JX3S0040090M (JX Semiconductor)
| Fabricante | JX Semiconductor |
| Descripción | 900V N-Channel SiC MOSFET in TO247-3 package |
| Páginas / Página | 7 / 1 — JX3S0040090M. 900V N-Channel MOSFET. Description. Features. Application. … |
| Formato / tamaño de archivo | PDF / 573 Kb |
| Idioma del documento | Inglés |
JX3S0040090M. 900V N-Channel MOSFET. Description. Features. Application. Ordering Information
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JX3S0040090M 900V N-Channel MOSFET Description
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to paral el and simple to drive ROHS Compliant, Halogen free
Application
EV Charging DC/DC Converters Switch Mode Power Supplies UPS Solar PV inverters
Ordering Information
Part Number Marking Package Packaging JX3S0040090M JX3S0040090M TO247-3 Tube 1 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.
Features
High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to paral el and simple to drive ROHS Compliant, Halogen free
Application
EV Charging DC/DC Converters Switch Mode Power Supplies UPS Solar PV inverters
Ordering Information
Part Number Marking Package Packaging JX3S0040090M JX3S0040090M TO247-3 Tube 1 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area