Datasheet JX3S0040090M (JX Semiconductor) - 2

JX3S0040090M Absolute Maximum Ratings(Tc=25 ) Symbol Parameter Value Unit
VDS Drain-Source Voltage 900 V ID Drain Current(continuous)at Tc=25C 60 A ID Drain Current(continuous)at Tc=100C 48 A IDM Drain Current (pulsed) 132 A VGS Gate-Source Voltage -10/+22 V PD Power Dissipation TC = 25°C 325 W TJ, Tstg Junction and Storage Temperature Range -55 to +150 C
Electrical Characteristics(TJ = 25 unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V 900 V VDS =900V, IDSS Zero Gate Voltage Drain Current 5 100 μA VGS =0V , TJ=25C VDS =0V ; IGSS Gate-body Leakage Current 10 250 nA VGS = -10 to 20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=10mA 2 3 4 V VGSon Recommended turn-on Voltage 20 V Static VGSoff Recommended turn-off Voltage -5 V VGS=20V, ID=30A 40 52 mΩ RDS(on) Static Drain-source On Resistance VGS=20V,ID=30A 52 mΩ TJ=150°C 2 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 150 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area