Datasheet MBR3060CT (Taiwan Semiconductor)
| Fabricante | Taiwan Semiconductor |
| Descripción | 30A, 60V, Automotive Planar Schottky in TO-220AB package |
| Páginas / Página | 7 / 1 — MBR3035CT – MBR30150CT. 30A, 35V - 150V Schottky Barrier Rectifier. … |
| Formato / tamaño de archivo | PDF / 566 Kb |
| Idioma del documento | Inglés |
MBR3035CT – MBR30150CT. 30A, 35V - 150V Schottky Barrier Rectifier. FEATURES. KEY PARAMETERS. PARAMETER. VALUE. UNIT. APPLICATIONS
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MBR3035CT – MBR30150CT
Taiwan Semiconductor
30A, 35V - 150V Schottky Barrier Rectifier FEATURES KEY PARAMETERS
● AEC-Q101 qualified available
PARAMETER VALUE UNIT
● Low power loss, high efficiency I ● Guard ring for overvoltage protection F 30 A ● High surge current capability VRRM 35 - 150 V ● RoHS Compliant IFSM 200 A ● Halogen-free according to IEC 61249-2-21 TJ MAX 150 °C
APPLICATIONS
Package TO-220AB ● Configuration Dual dies Switching mode power supply (SMPS) ● Adapters ● DC to DC converters
MECHANICAL DATA
● Case: TO-220AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Mounting torque: 0.56 N⋅m maximum ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.90g (approximately)
TO-220AB ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 3035 3045 3050 3060 3090 30100 30150 UNIT CT CT CT CT CT CT CT
MBR MBR MBR MBR MBR MBR MBR Marking code on the device 3035 3045 3050 3060 3090 30100 30150 CT CT CT CT CT CT CT Repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Reverse voltage, total rms value VR(RMS) 24 31 35 42 63 70 105 V Forward current IF 30 A Surge peak forward current, 8.3ms single half sine wave IFSM 200 A superimposed on rated load Peak repetitive reverse I surge current(1) RRM 1 0.5 A Peak repetitive forward current I (Rated V FRM 30 A R, Square wave, 20KHz) Critical rate of rise of off-state dv/dt 10,000 V/μs voltage Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C
Notes:
1. tp = 2.0μs, 1.0KHz 1 Version: K2104
Taiwan Semiconductor
30A, 35V - 150V Schottky Barrier Rectifier FEATURES KEY PARAMETERS
● AEC-Q101 qualified available
PARAMETER VALUE UNIT
● Low power loss, high efficiency I ● Guard ring for overvoltage protection F 30 A ● High surge current capability VRRM 35 - 150 V ● RoHS Compliant IFSM 200 A ● Halogen-free according to IEC 61249-2-21 TJ MAX 150 °C
APPLICATIONS
Package TO-220AB ● Configuration Dual dies Switching mode power supply (SMPS) ● Adapters ● DC to DC converters
MECHANICAL DATA
● Case: TO-220AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Mounting torque: 0.56 N⋅m maximum ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 1.90g (approximately)
TO-220AB ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR PARAMETER SYMBOL 3035 3045 3050 3060 3090 30100 30150 UNIT CT CT CT CT CT CT CT
MBR MBR MBR MBR MBR MBR MBR Marking code on the device 3035 3045 3050 3060 3090 30100 30150 CT CT CT CT CT CT CT Repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 V Reverse voltage, total rms value VR(RMS) 24 31 35 42 63 70 105 V Forward current IF 30 A Surge peak forward current, 8.3ms single half sine wave IFSM 200 A superimposed on rated load Peak repetitive reverse I surge current(1) RRM 1 0.5 A Peak repetitive forward current I (Rated V FRM 30 A R, Square wave, 20KHz) Critical rate of rise of off-state dv/dt 10,000 V/μs voltage Junction temperature TJ -55 to +150 °C Storage temperature TSTG -55 to +150 °C
Notes:
1. tp = 2.0μs, 1.0KHz 1 Version: K2104