Datasheet MBR3060CT (Taiwan Semiconductor) - 2

FabricanteTaiwan Semiconductor
Descripción30A, 60V, Automotive Planar Schottky in TO-220AB package
Páginas / Página7 / 2 — MBR3035CT – MBR30150CT. THERMAL PERFORMANCE. PARAMETER. SYMBOL. TYP. …
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MBR3035CT – MBR30150CT. THERMAL PERFORMANCE. PARAMETER. SYMBOL. TYP. UNIT. ELECTRICAL SPECIFICATIONS. CONDITIONS. MAX

MBR3035CT – MBR30150CT THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT ELECTRICAL SPECIFICATIONS CONDITIONS MAX

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MBR3035CT – MBR30150CT
Taiwan Semiconductor
THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT
MBR3035CT MBR3045CT Junction-to-case thermal resistance R MBR3050CT ӨJC 1.0 °C/W MBR3060CT MBR3090CT Junction-to-case thermal resistance MBR30100CT RӨJC 1.5 °C/W MBR30150CT
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
MBR3035CT - 0.70 V MBR3045CT MBR3050CT - 0.77 V MBR3060CT IF = 15A, TJ = 25°C MBR3090CT - 0.84 V MBR30100CT MBR30150CT - 0.95 V MBR3035CT - 0.82 V MBR3045CT MBR3050CT - - V MBR3060CT IF = 30A, TJ = 25°C MBR3090CT - 0.94 V MBR30100CT Forward voltage per MBR30150CT - 1.02 V V diode(1) F MBR3035CT - 0.60 V MBR3045CT MBR3050CT - 0.67 V MBR3060CT IF = 15A, TJ = 125°C MBR3090CT - 0.70 V MBR30100CT MBR30150CT - 0.92 V MBR3035CT - 0.73 V MBR3045CT MBR3050CT - - V MBR3060CT IF = 30A, TJ = 125°C MBR3090CT - 0.82 V MBR30100CT MBR30150CT - 0.98 V MBR3035CT MBR3045CT MBR3050CT - 200 µA MBR3060CT TJ = 25°C MBR3090CT MBR30100CT Reverse current @ MBR30150CT - 100 µA I rated V R R per diode(2) MBR3035CT - 15 mA MBR3045CT MBR3050CT - 10 mA MBR3060CT TJ = 125°C MBR3090CT - 7.5 mA MBR30100CT MBR30150CT - 5 mA 2 Version: K2104