Datasheet JX0320R065MT3 (JX Semiconductor) - 3
| Fabricante | JX Semiconductor |
| Descripción | 650V N-Channel MOSFET in TO247-3 package |
| Páginas / Página | 7 / 3 — JX0320R065MT3. Typical Performance-Dynamic. Symbol. Parameter. Test … |
| Formato / tamaño de archivo | PDF / 616 Kb |
| Idioma del documento | Inglés |
JX0320R065MT3. Typical Performance-Dynamic. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit
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JX0320R065MT3 Typical Performance-Dynamic Symbol Parameter Test Conditions Min. Typ. Max. Unit
Ciss Input Capacitance 339 pF VDS=600V,f= 1MHZ, Coss Output Capacitance 20 pF VAC=25mV Crss Reverse Transfer Capacitance 3.5 pF gfs Transconductance VDS=15V , ID=2A 2.8 S EOSS COSS Stored Energy VDS=600V,f= 1MHZ 5 μJ V E DS=400V,VGS=-3/15V， ON Turn-On Energy（Body Diode） 47 μJ ID=2A，L=1.5mH EOFF Turn-Of Energy（Body Diode） T 8.5 J=150℃ μJ Qg Total Gate Charge 12.8 nC VDS=400V, VGS=-3V/15V, Qgs Gate-source Charge ID = 2 A 3 nC Qgd Gate-Drain Charge 4 nC RG Internal Gate Resistance f=1MHz,V （int） AC=25mV 8 Ω td(on) Turn-on Delay Time VDS=400V,VGS=-3V/15V, 5 ns ID =2A, L=1mH tr Rise Time 6 ns td(off) Turn-of Delay Time Rext=2.5Ω 7 ns tf Fal Time 8.8 ns
Typical Performance-Reverse Diode(TJ = 25℃ unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=2A,TJ=25。C 5.5 6.5 V VFSD Forward Voltage VGS=0V,IF=2A,TJ=150。C 4.8 6.5 V Is Continuous Diode Forward Current VGS=0V，TC=25。C A trr Reverse Recovery Time VGS=-3 V, IF=2 A, nS Qrr Reverse Recovery Charge VR=400 V, TJ=150。C nC di/dt= 1000 A/μs Irrm Peak Reverse Recovery Current A
Thermal Characteristics
Symbol Parameter Value. Unit RθJC Thermal Resistance, Junction-to-Case 1.92 。C/W RθJA Thermal Resistance, Junction-to-Ambient 62 。C/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃ 3 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing:
Ciss Input Capacitance 339 pF VDS=600V,f= 1MHZ, Coss Output Capacitance 20 pF VAC=25mV Crss Reverse Transfer Capacitance 3.5 pF gfs Transconductance VDS=15V , ID=2A 2.8 S EOSS COSS Stored Energy VDS=600V,f= 1MHZ 5 μJ V E DS=400V,VGS=-3/15V， ON Turn-On Energy（Body Diode） 47 μJ ID=2A，L=1.5mH EOFF Turn-Of Energy（Body Diode） T 8.5 J=150℃ μJ Qg Total Gate Charge 12.8 nC VDS=400V, VGS=-3V/15V, Qgs Gate-source Charge ID = 2 A 3 nC Qgd Gate-Drain Charge 4 nC RG Internal Gate Resistance f=1MHz,V （int） AC=25mV 8 Ω td(on) Turn-on Delay Time VDS=400V,VGS=-3V/15V, 5 ns ID =2A, L=1mH tr Rise Time 6 ns td(off) Turn-of Delay Time Rext=2.5Ω 7 ns tf Fal Time 8.8 ns
Typical Performance-Reverse Diode(TJ = 25℃ unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit VGS=0V,IF=2A,TJ=25。C 5.5 6.5 V VFSD Forward Voltage VGS=0V,IF=2A,TJ=150。C 4.8 6.5 V Is Continuous Diode Forward Current VGS=0V，TC=25。C A trr Reverse Recovery Time VGS=-3 V, IF=2 A, nS Qrr Reverse Recovery Charge VR=400 V, TJ=150。C nC di/dt= 1000 A/μs Irrm Peak Reverse Recovery Current A
Thermal Characteristics
Symbol Parameter Value. Unit RθJC Thermal Resistance, Junction-to-Case 1.92 。C/W RθJA Thermal Resistance, Junction-to-Ambient 62 。C/W The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃ 3 Document Outline Description The values are based on the junction-to case therm 0 2 4 6 16 14 10 6 2 Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature 0 5 Fig9. 3rd Quadrant Characteristic at 25 oC -10 -8 -6 -2 5 Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig17.Transient Thermal Impedance Fig16. Switching Times vs. RG(ext) Package Drawing: