Datasheet JX4S0150R330M (JX Semiconductor) - 5

JX4S0150R330M Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics
4 20 3.5 15 3 2.5 10 2 5 1.5 1 0 0.5 -5 0 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 2 1 5 150 175
Junction Temperature TJ ( C) Gate Charge, QG (nC) Fig9. 3rd Quadrant Characteristic at 25 C Fig10. Output Capacitor Stored Energy
0 35 30 25 VGS=0V -5 20 15 VGS=20V -10 10 5 0 -15 0 200 400 600 800 1000 -6
Dra
-
i
4
n-Source Voltage
-2
V
0
DS (V) Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
1.E+04 400 CISS 350 1.E+03 300 250 1.E+02 C 200 OSS 150 1.E+01 100 CRSS 50 1.E+00 0 0 200 400 600 800 1000 1200 -50 -25 0 25 50 75 100 125 150 175
Drain-Source Voltage, VDS (V) Case Temperature, TC ( C)
5 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics Fig9. 3rd Quadrant Characteristic at 25 oC Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance