Datasheet JX4S0150R330M (JX Semiconductor) - 6

JX4S0150R330M Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext)
1000 1200
V V GS=-5/+ 20 V GS=-5/+20 V V VDS = 1700V DS = 17 00V L=150u H
1000
L=150uH
800
RG(ext)= 8Ω
800 Etotal 600 Eon 600 Etotal 400 Eon 400 200 E 200 off Eoff 0 0 0 5 0
Drain to
10
Source
5 30
C
15
urrent,
2
S (A)
2
ID
8 10 12 14 16 18 20
External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
900 200
VGS=-5/+20 V
800
VGS=-5/+20 V VDS = 1700V VDS = 1700V
180
L=150uH
tdon
L=150uH
Etotal 700 160 Eon 600 140 120 500 100 400 80 300 td fof 60 tr 200 40 tf Eoff 100 20 0 0 25 50 75 100 125 150 175 8 10 12 14 16 18 20
Junction Temperature, TJ ( C) External Gate Resistor RG(ext) (Ohms) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
1 100 100us 0.5 10ms 0.1 0.2 10 0.1 100ms 0.05 0.02 Single Pluse 0.01 1 0.1 0.001 0.1 1 10 100 1000 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00
Time, tp (s) Drain-Source Voltage, VDS (V)
6 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics Fig9. 3rd Quadrant Characteristic at 25 oC Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance