Preliminary Datasheet EPC2103 (Efficient Power Conversion) - 8
| Fabricante | Efficient Power Conversion |
| Descripción | Enhancement-Mode GaN Power Transistor Half Bridge |
| Páginas / Página | 10 / 8 — EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary … |
| Formato / tamaño de archivo | PDF / 1.3 Mb |
| Idioma del documento | Inglés |
EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge. Preliminary Specification Sheet. DIE MARKINGS. DIE OUTLINE
Línea de modelo para esta hoja de datos
EPC2103
Versión de texto del documento
EPC2103 – Enhancement-Mode GaN Power Transistor Half Bridge Preliminary Specification Sheet DIE MARKINGS
Laser Marking Part Number Part # Marking Lot_Date Code Lot_Date Code Line 1 Marking Line 2 Marking Line 3 EPC2103ENGR 21XX YYYY ZZZZ
DIE OUTLINE Solder Bar View Pad 2 is Gate1 ( high side); Pad 4 is Gate2 ( low side); Pad 3 is HS Gate Return; Pads 5, 14, 15, 24, 25, 34, 35, 43, 44, 35, 53, 54, 44, 63, 64, 65, 73, 74, 75 are Ground Pads 1, 11, 12, 13, 21, 22, 23, 31, 32, 33, 41, 42, 51, 52, 61, 62, 71, 72 are VIN Pads 3, 6, 7, 8, 9, 10, 16, 17, 18, 19, 20, 26, 27, 28, 29, 30, 36, 37, 38, 39, 40, 46, 47, 48, 49, 50, 56, 57, 58, 59, 60, 66, 67, 68, 69, 70 are switch node. Side View
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 8
Laser Marking Part Number Part # Marking Lot_Date Code Lot_Date Code Line 1 Marking Line 2 Marking Line 3 EPC2103ENGR 21XX YYYY ZZZZ
DIE OUTLINE Solder Bar View Pad 2 is Gate1 ( high side); Pad 4 is Gate2 ( low side); Pad 3 is HS Gate Return; Pads 5, 14, 15, 24, 25, 34, 35, 43, 44, 35, 53, 54, 44, 63, 64, 65, 73, 74, 75 are Ground Pads 1, 11, 12, 13, 21, 22, 23, 31, 32, 33, 41, 42, 51, 52, 61, 62, 71, 72 are VIN Pads 3, 6, 7, 8, 9, 10, 16, 17, 18, 19, 20, 26, 27, 28, 29, 30, 36, 37, 38, 39, 40, 46, 47, 48, 49, 50, 56, 57, 58, 59, 60, 66, 67, 68, 69, 70 are switch node. Side View
Subject to Change without Notice www.epc-co.com COPYRIGHT 2015 Page 8