Datasheet Texas Instruments CSD19538Q2 — Ficha de datos
| Fabricante | Texas Instruments |
| Serie | CSD19538Q2 |
MOSFET de potencia NexFET SON2x2 de 100V, 49mOhm
Hojas de datos
CSD19538Q2 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 394 Kb, Revisión: A, Archivo publicado: enero 20, 2017
Extracto del documento
Precios
Estado
| CSD19538Q2 | CSD19538Q2T | |
|---|---|---|
| Estado del ciclo de vida | Activo (Recomendado para nuevos diseños) | Activo (Recomendado para nuevos diseños) |
| Disponibilidad de muestra del fabricante | No | Sí |
Embalaje
| CSD19538Q2 | CSD19538Q2T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 6 | 6 |
| Package Type | DQK | DQK |
| Package QTY | 3000 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | 1958 | 1958 |
| Width (mm) | 2 | 2 |
| Length (mm) | 2 | 2 |
| Thickness (mm) | .75 | .75 |
| Mechanical Data | Descargar | Descargar |
Paramétricos
| Parameters / Models | CSD19538Q2 | CSD19538Q2T |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 13.1 | 13.1 |
| IDM, Max Pulsed Drain Current(Max), A | 34.4 | 34.4 |
| Package, mm | SON2x2 | SON2x2 |
| QG Typ, nC | 4.3 | 4.3 |
| QGD Typ, nC | 0.8 | 0.8 |
| Rds(on) Max at VGS=10V, mOhms | 59 | 59 |
| VDS, V | 100 | 100 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 3.2 | 3.2 |
Plan ecológico
| CSD19538Q2 | CSD19538Q2T | |
|---|---|---|
| RoHS | Obediente | Obediente |
Linea modelo
Serie: CSD19538Q2 (2)
Clasificación del fabricante
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor