Datasheet Infineon IRFL024N — Ficha de datos

PD -95339 IRFL024NPbF
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Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.075Ω G ID = 2.8A S Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications. …