Datasheet IRFL024N (Infineon)
| Fabricante | Infineon |
| Descripción | 55V Single N-Channel IR MOSFET in SOT-223 package |
| Páginas / Página | 9 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| Formato / tamaño de archivo | PDF / 146 Kb |
| Idioma del documento | Inglés |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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PD - 95339 IRFL024NPbF HEXFET® Power MOSFET l Surface Mount l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l Fast Switching RDS(on) = 0.075Ω l Fully Avalanche Rated G l Lead-Free ID = 2.8A S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick- SOT-223 and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.0 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.8 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.3 IDM Pulsed Drain Current 11.2 PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W Linear Derating Factor (PCB Mount)* 8.3 mW/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 214 mJ IAR Avalanche Current 2.8 A EAR Repetitive Avalanche Energy* 0.1 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 90 120 °C/W RθJA Junction-to-Amb. (PCB Mount, steady state)** 50 60 * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 05/28/04
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick- SOT-223 and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Absolute Maximum Ratings Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 4.0 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 2.8 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 2.3 IDM Pulsed Drain Current 11.2 PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W Linear Derating Factor (PCB Mount)* 8.3 mW/°C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 214 mJ IAR Avalanche Current 2.8 A EAR Repetitive Avalanche Energy* 0.1 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance Parameter Typ. Max. Units
RθJA Junction-to-Amb. (PCB Mount, steady state)* 90 120 °C/W RθJA Junction-to-Amb. (PCB Mount, steady state)** 50 60 * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 05/28/04