JX3S0020120M 1200V, 100A, 16mΩ, N-Channel, Silicon Carbide MOSFET Product Data Sheet JX-3T04-27A A/2 General Description
TheJX-MT3 series SiC MOSFET in TO-247-3L package
ensures stable high-temperature operation for power-dense
and energy-critical systems, enabling compact designs with
reduced EMI. Features 3rd Generation SiC MOSFET Technology High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to parallel and Simple to Drive RoHS Compliant, Halogen Free Ordering Informations Applications EV Charging High Voltage DC/DC Converters Switch Mode Power Supplies Power Factor Correction Modules Order Number / Marking ASC100N1200MT3 Package Type TO-247-3L Packing Method Tube Key Parameters
Symbol Parameter Test Conditions Values Unit 1200 V TC=25°C Absolute maximum rating
VDS Drain-source Voltage ID Drain Current (continuous) 115 A TC=25°C PD Power Dissipation 550 W TC=25°C TJ Junction Temperature -55 to +175 °C Symbol Parameter Min. Typ. Max. Unit Test Conditions -16 22 mΩ VGS=18V; ID=50A; TJ=25°C nC VDS=800V; VGS=-5V/18V; ID=50A nC VGS=-5V; IF=50A; VR=800V;
di/dt=900A/μs; TJ=175°C Static characteristics
RDS(on) Static Drain-source on Resistance Dynamic characteristics
QG Total Gate Charge -238 -QGD Gate-drain Charge -78.3 -613 -Source-drain diode
Qrr Reverse Recovery Charge Product Data Sheet 1 JX-3T04-27AA/2 JX3S0020120M 1200V, N-Channel, Silicon Carbide MOSFET Absolute Maximum Ratings (at TC=25 °C unless otherwise specified)
Symbol Values Unit Drain-source Voltage 1200 V Drain Current (continuous; TC=25°C) 115 A Drain Current (continuous; TC=100°C) 85 A IDM Drain Current (pulsed) 250 A VGS Gate-source Voltage -10/+22V V PD Power Dissipation (TC=25°C) 550 W -55 to +175 °C VDS
ID TJ ; Tstg Parameter Junction and Storage Temperature Range MOSFET Characteristics
Symbol Parameter Min. Typ. Max. Unit Test Conditions Static characteristics (at TJ=25°C unless otherwise specified)
BVDS Drain-source Breakdown Voltage 1200 -V ID=250μA; VGS=0V IDSS Zero Gate Voltage Drain Current -5 100 μA VDS=1200V; VGS=0V IGSS Gate-body Leakage Current -10 250 nA VGS=-10/20V; VDS=0V VGS(th) Gate Threshold Voltage 2 3 4 V VDS=VGS ; ID=22mA VGS(on) Recommended Turn-on Voltage -18 -VGS(off) Recommended Turn-off Voltage -5 -V Static RDS(on) Static Drain-source on Resistance 16 22 28 mΩ VGS=18V; ID=50A
VGS=18V; ID=50A; TJ=175°C Dynamic characteristics (at TJ=25°C unless otherwise specified)
Ciss Input Capacitance -6878 -Coss Output Capacitance -288 -Crss Reverse Transfer Capacitance -13 -gfs Transconductance -51 Eoss Coss Stored Energy -Eon Turn-on Energy …
