Datasheet JX3S0020120M (JX Semiconductor)
| Fabricante | JX Semiconductor |
| Descripción | 1200V, 40 Ohm, Silicon Carbide MOSFET in TO-247-3L package |
| Páginas / Página | 10 / 1 — JX3S0040R120MC. 特点 Features. 应用 Applications. 碳化硅功率MOSFET/ SiC Power … |
| Formato / tamaño de archivo | PDF / 813 Kb |
| Idioma del documento | Inglés |
JX3S0040R120MC. 特点 Features. 应用 Applications. 碳化硅功率MOSFET/ SiC Power MOSFET
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JX3S0040R120MC
1200V 40mΩ 碳化硅功率MOSFET, TO-247-3L 1200V 40mΩ Silicon Carbide Power MOSFET, TO-247-3L
特点 Features
• 高阻断电压，低导通电阻 High Blocking Voltage with Low On-Resistance • 高开关速度，低寄生电容 High Speed Switching with Low Capacitances • 易于并联，驱动简单 D(2) Easy to Paral el and Simple to Drive • 抗闩锁效应 Resistant to Latch-Up G • 无卤素添加，符合RoHS标准 (1) Halogen Free, RoHS Compliant 1 2 3 S(3)
应用 Applications
• 电动汽车充电桩 EV Charging Station • PFC及DC/DC转换 Power Factor Correction or DC/DC Converters • 光伏逆变器 Solar Inverters • 电机驱动系统 Motor Drives • 开关模式电源（SMPS） Switch Mode Power Supplys
碳化硅功率MOSFET/ SiC Power MOSFET 最大额定值/ Maximum Rated Values (TC=25 unless otherwise noted) 参数 Parameter 符号 Symbol 条件 Condition 数值 Value 单位 Unit
漏极-源极电压 Drain-Source Voltage VDSmax VGS=0V, ID=100uA 1200 V 栅极-源极电压 Gate-Source Voltage VGSmax Absolute maximum values -10/+22 V 栅极-源极电压 Gate-Source Voltage VGSop Recommended operational values -5/+18 V 连续漏极电流 VGS=18V, TC=25℃ 79 Continuous Drain Current ID A VGS=18V, TC=100℃ 50 漏极脉冲电流 Pulsed Drain Current ID(pulse) Pulse width tp limited by Tjmax 180 A 耗散功率 Power Dissipation PD TC=25℃, TJ=150℃ 357 W 工作结温 Operating Junction Temperature Tvj, op -55~150 ℃ 存储温度范围 Storage Temperature Range Tstg -55~150 ℃ Document Outline 特点 Features
1200V 40mΩ 碳化硅功率MOSFET, TO-247-3L 1200V 40mΩ Silicon Carbide Power MOSFET, TO-247-3L
特点 Features
• 高阻断电压，低导通电阻 High Blocking Voltage with Low On-Resistance • 高开关速度，低寄生电容 High Speed Switching with Low Capacitances • 易于并联，驱动简单 D(2) Easy to Paral el and Simple to Drive • 抗闩锁效应 Resistant to Latch-Up G • 无卤素添加，符合RoHS标准 (1) Halogen Free, RoHS Compliant 1 2 3 S(3)
应用 Applications
• 电动汽车充电桩 EV Charging Station • PFC及DC/DC转换 Power Factor Correction or DC/DC Converters • 光伏逆变器 Solar Inverters • 电机驱动系统 Motor Drives • 开关模式电源（SMPS） Switch Mode Power Supplys
碳化硅功率MOSFET/ SiC Power MOSFET 最大额定值/ Maximum Rated Values (TC=25 unless otherwise noted) 参数 Parameter 符号 Symbol 条件 Condition 数值 Value 单位 Unit
漏极-源极电压 Drain-Source Voltage VDSmax VGS=0V, ID=100uA 1200 V 栅极-源极电压 Gate-Source Voltage VGSmax Absolute maximum values -10/+22 V 栅极-源极电压 Gate-Source Voltage VGSop Recommended operational values -5/+18 V 连续漏极电流 VGS=18V, TC=25℃ 79 Continuous Drain Current ID A VGS=18V, TC=100℃ 50 漏极脉冲电流 Pulsed Drain Current ID(pulse) Pulse width tp limited by Tjmax 180 A 耗散功率 Power Dissipation PD TC=25℃, TJ=150℃ 357 W 工作结温 Operating Junction Temperature Tvj, op -55~150 ℃ 存储温度范围 Storage Temperature Range Tstg -55~150 ℃ Document Outline 特点 Features