Datasheet C2M0080170P (Wolfspeed) - 2
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET 1700 V 40 A 80 mΩ |
| Páginas / Página | 10 / 2 — Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test Conditions. Note. Reverse Diode Characteristics
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Electrical Characteristics
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA 2.0 2.6 4 V VDS = VGS, ID = 10 mA VGS(th) Gate Threshold Voltage Fig. 11 2.0 V VDS = VGS, ID = 10 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1700 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 80 125 VGS = 20 V, ID = 28 A R Fig. 4, DS(on) Drain-Source On-State Resistance mΩ 5, 6 150 VGS = 20 V, ID = 28 A, TJ = 150ºC 9.73 VDS= 20 V, IDS= 20 A gfs Transconductance S Fig. 7 10.07 VDS= 20 V, IDS= 20 A, TJ = 150ºC Ciss Input Capacitance 2250 VGS = 0 V Coss Output Capacitance 105 pF Fig. 17, VDS = 1000 V 18 Crss Reverse Transfer Capacitance 4 f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 65 μJ Fig. 16 E V = 20A, ON Turn-On Switching Energy (SiC Diode FWD) 0.3 DS = 1200 V, VGS = -5/20 V, ID mJ Fig. 26, R = 2.5Ω, L= 200 μH, T G(ext) J = 150ºC, 29b EOFF Turn Off Switching Energy (SiC Diode FWD) 0.1 Using SiC Diode as FWD E V = 20A, ON Turn-On Switching Energy (Body Diode FWD) 1.1 DS = 1200 V, VGS = -5/20 V, ID mJ Fig. 26, R = 2.5Ω, L= 200 μH, T G(ext) J = 150ºC, 29a EOFF Turn Off Switching Energy (Body Diode FWD) 0.1 Using MOSFET as FWD td(on) Turn-On Delay Time 25 VDD = 1200 V, VGS = -5/20 V tr Rise Time 9 I ns D = 20 A, RG(ext) = 2.5 Ω, Timing relative to V Fig. 27 DS td(off) Turn-Off Delay Time 34 Inductive load tf Fall Time 18 RG(int) Internal Gate Resistance 2 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 28 VDS = 1200 V, VGS = -5/20 V Qgd Gate to Drain Charge 33 nC ID = 20 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 120
Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
4.1 V V = - 5 V, I = 10 A V GS SD Fig. 8, SD Diode Forward Voltage 9, 10 3.6 V V = - 5 V, I = 10 A, T = 150 °C GS SD J I = - 5 V S Continuous Diode Forward Current 28 A TC = 25˚C, VGS Note 1 t Reverse Recover time 36 ns rr V = - 5 V, I = 20 A, V = 1200 V GS SD R Q Reverse Recovery Charge 1 µC rr dif/dt = 2600 A/µs, T = 150 °C Note 1 J I Peak Reverse Recovery Current 38 A rrm
Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.37 0.45 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40
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C2M0080170P Rev. A, 05-2018
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1700 V VGS = 0 V, ID = 100 μA 2.0 2.6 4 V VDS = VGS, ID = 10 mA VGS(th) Gate Threshold Voltage Fig. 11 2.0 V VDS = VGS, ID = 10 mA, TJ = 150ºC IDSS Zero Gate Voltage Drain Current 1 100 μA VDS = 1700 V, VGS = 0 V IGSS Gate-Source Leakage Current 250 nA VGS = 20 V, VDS = 0 V 80 125 VGS = 20 V, ID = 28 A R Fig. 4, DS(on) Drain-Source On-State Resistance mΩ 5, 6 150 VGS = 20 V, ID = 28 A, TJ = 150ºC 9.73 VDS= 20 V, IDS= 20 A gfs Transconductance S Fig. 7 10.07 VDS= 20 V, IDS= 20 A, TJ = 150ºC Ciss Input Capacitance 2250 VGS = 0 V Coss Output Capacitance 105 pF Fig. 17, VDS = 1000 V 18 Crss Reverse Transfer Capacitance 4 f = 1 MHz VAC = 25 mV Eoss Coss Stored Energy 65 μJ Fig. 16 E V = 20A, ON Turn-On Switching Energy (SiC Diode FWD) 0.3 DS = 1200 V, VGS = -5/20 V, ID mJ Fig. 26, R = 2.5Ω, L= 200 μH, T G(ext) J = 150ºC, 29b EOFF Turn Off Switching Energy (SiC Diode FWD) 0.1 Using SiC Diode as FWD E V = 20A, ON Turn-On Switching Energy (Body Diode FWD) 1.1 DS = 1200 V, VGS = -5/20 V, ID mJ Fig. 26, R = 2.5Ω, L= 200 μH, T G(ext) J = 150ºC, 29a EOFF Turn Off Switching Energy (Body Diode FWD) 0.1 Using MOSFET as FWD td(on) Turn-On Delay Time 25 VDD = 1200 V, VGS = -5/20 V tr Rise Time 9 I ns D = 20 A, RG(ext) = 2.5 Ω, Timing relative to V Fig. 27 DS td(off) Turn-Off Delay Time 34 Inductive load tf Fall Time 18 RG(int) Internal Gate Resistance 2 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 28 VDS = 1200 V, VGS = -5/20 V Qgd Gate to Drain Charge 33 nC ID = 20 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 120
Reverse Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
4.1 V V = - 5 V, I = 10 A V GS SD Fig. 8, SD Diode Forward Voltage 9, 10 3.6 V V = - 5 V, I = 10 A, T = 150 °C GS SD J I = - 5 V S Continuous Diode Forward Current 28 A TC = 25˚C, VGS Note 1 t Reverse Recover time 36 ns rr V = - 5 V, I = 20 A, V = 1200 V GS SD R Q Reverse Recovery Charge 1 µC rr dif/dt = 2600 A/µs, T = 150 °C Note 1 J I Peak Reverse Recovery Current 38 A rrm
Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note
RθJC Thermal Resistance from Junction to Case 0.37 0.45 °C/W Fig. 21 RθJA Thermal Resistance From Junction to Ambient 40
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C2M0080170P Rev. A, 05-2018