Datasheet NTD6600N (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET100 V, 12 A, N−Channel, Logic Level DPAK |
| Páginas / Página | 7 / 4 — NTD6600N. TYPICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. … |
| Revisión | 4 |
| Formato / tamaño de archivo | PDF / 123 Kb |
| Idioma del documento | Inglés |
NTD6600N. TYPICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
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NTD6600N TYPICAL CHARACTERISTICS
24 25 VGS = 9 V 4.2 V 4 V TJ = 25°C VDS ≥ 10 V 21 10 V 5.5 V 3.8 V 20 18 15 15 3.4 V 12 9 10 3 V TJ = 150°C 6 T , DRAIN CURRENT (AMPS) J = −55°C , DRAIN CURRENT (AMPS) 5 2.6 V I D 3 I D TJ = 25°C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 V V DS, DRAIN−TO−SOURCE VOLTAGE (V) GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
) (W (W 0.4 0.20 V T GS = 5 V J = 25°C ANCE ANCE 0.18 0.3 T 0.16 J = 150°C RESIST RESIST 0.14 VGS = 5 V 0.2 0.12 O−SOURCE TJ = 25°C O−SOURCE 0.10 VGS = 10 V 0.1 T 0.08 J = −55°C 0.06 , DRAIN−T , DRAIN−T 0 0.04 DS(on) 0 4 8 12 16 DS(on) 0 4 8 12 16 20 24 R R ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Temperature
2.5 10000 I V D = 12 A GS = 0 V 2.25 VGS = 5 V (NORMALIZED) 2.0 TJ = 150°C 1000 ANCE 1.75 1.5 RESIST 1.25 , LEAKAGE (nA) 100 TJ = 125°C 1.0 I DSS 0.75 O−SOURCE 0.5 10 −50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) , DRAIN−T
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage
DS(on)R
Temperature Current versus Voltage http://onsemi.com 3
24 25 VGS = 9 V 4.2 V 4 V TJ = 25°C VDS ≥ 10 V 21 10 V 5.5 V 3.8 V 20 18 15 15 3.4 V 12 9 10 3 V TJ = 150°C 6 T , DRAIN CURRENT (AMPS) J = −55°C , DRAIN CURRENT (AMPS) 5 2.6 V I D 3 I D TJ = 25°C 0 0 0 2 4 6 8 10 0 1 2 3 4 5 6 V V DS, DRAIN−TO−SOURCE VOLTAGE (V) GS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
) (W (W 0.4 0.20 V T GS = 5 V J = 25°C ANCE ANCE 0.18 0.3 T 0.16 J = 150°C RESIST RESIST 0.14 VGS = 5 V 0.2 0.12 O−SOURCE TJ = 25°C O−SOURCE 0.10 VGS = 10 V 0.1 T 0.08 J = −55°C 0.06 , DRAIN−T , DRAIN−T 0 0.04 DS(on) 0 4 8 12 16 DS(on) 0 4 8 12 16 20 24 R R ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Temperature
2.5 10000 I V D = 12 A GS = 0 V 2.25 VGS = 5 V (NORMALIZED) 2.0 TJ = 150°C 1000 ANCE 1.75 1.5 RESIST 1.25 , LEAKAGE (nA) 100 TJ = 125°C 1.0 I DSS 0.75 O−SOURCE 0.5 10 −50 −25 0 25 50 75 100 125 150 175 0 10 20 30 40 50 60 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) , DRAIN−T
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage
DS(on)R
Temperature Current versus Voltage http://onsemi.com 3