Datasheet NTD6600N (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET100 V, 12 A, N−Channel, Logic Level DPAK |
| Páginas / Página | 7 / 3 — NTD6600N. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. … |
| Revisión | 4 |
| Formato / tamaño de archivo | PDF / 123 Kb |
| Idioma del documento | Inglés |
NTD6600N. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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NTD6600N ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 mAdc) 100 − − Zero Gate Voltage Drain Current IDSS mAdc (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) − − 1.0 (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C) − − 10 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − ±100 nAdc
ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mAdc) 1.0 1.5 2.0 Vdc Temperature Coefficient (Negative) − −4.4 − mV/°C Static Drain−to−Source On−State Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc) RDS(on) − 118 146 mW Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 12 Adc) VDS(on) − 1.5 2.2 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) gFS − 10 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 463 700 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 116 225 Reverse Transfer Capacitance Crss − 36 75
SWITCHING CHARACTERISTICS
(Notes 4 & 5) Turn−On Delay Time td(on) − 10.5 20 ns Rise Time t (V r − 75 140 DD = 80 Vdc, ID = 6.0 Adc, V Turn−Off Delay Time GS = 5.0 Vdc, RG = 9.1 W) td(off) − 26 40 Fall Time tf − 50 90 Total Gate Charge Qtot − 11.3 20 nC (VDS = 80 Vdc, ID = 6.0 Adc, Gate−to−Source Charge Q V gs − 1.9 − GS = 5.0 Vdc) Gate−to−Drain Charge Qgd − 7.4 −
BODY−DRAIN DIODE RATINGS
(Note 4) Diode Forward On−Voltage (IS = 12 Adc, VGS = 0 Vdc) VSD − 0.90 1.4 Vdc (IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.80 − Reverse Recovery Time trr − 80 − ns (IS = 12 Adc, VGS = 0 Vdc, t dI a − 50 − S/dt = 100 A/ms) tb − 30 − Reverse Recovery Stored Charge QRR − 0.240 − mC 4. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION Device Package Shipping
† NTD6600N DPAK NTD6600N−1 DPAK−3 75 Units/Rail NTD6600N−1G DPAK−3 (Pb−Free) NTD6600NT4 DPAK NTD6600NT4G DPAK 2500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2
NTD6600N ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 mAdc) 100 − − Zero Gate Voltage Drain Current IDSS mAdc (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C) − − 1.0 (VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C) − − 10 Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − ±100 nAdc
ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mAdc) 1.0 1.5 2.0 Vdc Temperature Coefficient (Negative) − −4.4 − mV/°C Static Drain−to−Source On−State Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc) RDS(on) − 118 146 mW Drain−to−Source On−Voltage (VGS = 5.0 Vdc, ID = 12 Adc) VDS(on) − 1.5 2.2 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) gFS − 10 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 463 700 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 116 225 Reverse Transfer Capacitance Crss − 36 75
SWITCHING CHARACTERISTICS
(Notes 4 & 5) Turn−On Delay Time td(on) − 10.5 20 ns Rise Time t (V r − 75 140 DD = 80 Vdc, ID = 6.0 Adc, V Turn−Off Delay Time GS = 5.0 Vdc, RG = 9.1 W) td(off) − 26 40 Fall Time tf − 50 90 Total Gate Charge Qtot − 11.3 20 nC (VDS = 80 Vdc, ID = 6.0 Adc, Gate−to−Source Charge Q V gs − 1.9 − GS = 5.0 Vdc) Gate−to−Drain Charge Qgd − 7.4 −
BODY−DRAIN DIODE RATINGS
(Note 4) Diode Forward On−Voltage (IS = 12 Adc, VGS = 0 Vdc) VSD − 0.90 1.4 Vdc (IS = 12 Adc, VGS = 0 Vdc, TJ = 125°C) − 0.80 − Reverse Recovery Time trr − 80 − ns (IS = 12 Adc, VGS = 0 Vdc, t dI a − 50 − S/dt = 100 A/ms) tb − 30 − Reverse Recovery Stored Charge QRR − 0.240 − mC 4. Indicates Pulse Test: P.W. = 300 ms max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION Device Package Shipping
† NTD6600N DPAK NTD6600N−1 DPAK−3 75 Units/Rail NTD6600N−1G DPAK−3 (Pb−Free) NTD6600NT4 DPAK NTD6600NT4G DPAK 2500 Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2