Datasheet HUF75652G3 (ON Semiconductor) - 9

FabricanteON Semiconductor
DescripciónMOSFET – Power, N-Channel, Ultrafet 100 V, 75 A, 8 mW
Páginas / Página12 / 9 — HUF75652G3. SABER Electrical Model. LDRAIN. DPLCAP 5. DRAIN. RLDRAIN. …
Formato / tamaño de archivoPDF / 553 Kb
Idioma del documentoInglés

HUF75652G3. SABER Electrical Model. LDRAIN. DPLCAP 5. DRAIN. RLDRAIN. RSLC1. RDBREAK. RSLC2. ISCL. RDBODY. DBREAK. RDRAIN. ESG. EVTHRES. − 21. MWEAK

HUF75652G3 SABER Electrical Model LDRAIN DPLCAP 5 DRAIN RLDRAIN RSLC1 RDBREAK RSLC2 ISCL RDBODY DBREAK RDRAIN ESG EVTHRES − 21 MWEAK

Línea de modelo para esta hoja de datos

Versión de texto del documento

HUF75652G3 SABER Electrical Model
REV 11 May 1999 template ta75652 n2,n1,n3 electrical n2,n1,n3 { var i iscl d..model dbodymod = (is = 6.55e−12, cjo = 8.71e−9, tt = 7.81e−8, m = 0.50) d..model dbreakmod = () d..model dplcapmod = (cjo = 1.0e−8, is = 1e−30, n=1, m = 0.85 ) m..model mmedmod = (type=_n, vto = 2.91, kp = 6.5, is = 1e−30, tox = 1) m..model mstrongmod = (type=_n, vto = 3.37, kp = 205, is = 1e−30, tox = 1) m..model mweakmod = (type=_n, vto = 2.56, kp = 0.1, is = 1e−30, tox = 1)
LDRAIN
sw_vcsp..model s1amod = (ron = 1e−5, roff = 0.1, von = −5, voff = −3)
DPLCAP 5 DRAIN
sw_vcsp..model s1bmod = (ron =1e−5, roff = 0.1, von = −3, voff = −5)
2
sw_vcsp..model s2amod = (ron = 1e−5, roff = 0.1, von = −2, voff = 0)
10
sw_vcsp..model s2bmod = (ron = 1e−5, roff = 0.1, von = 0, voff = −2)
RLDRAIN RSLC1 51 RDBREAK
c.ca n12 n8 = 11.0e−9
RSLC2
c.cb n15 n14 = 11.4e−9
72 ISCL RDBODY
c.cin n6 n8 = 6.95e−9
DBREAK 50
d.dbody n7 n71 = model=dbodymod

d.dbreak n72 n11 = model=dbreakmod
6 RDRAIN 71 ESG 11
d.dplcap n10 n5 = model=dplcapmod
8 + EVTHRES 16 + − 21
i.it n8 n17 = 1
19 MWEAK LGATE EVTEMP 8 DBODY GATE RGATE − 6
l.ldrain n2 n5 = 1e−9
+ 18 EBREAK 1 22 MMED +
l.lgate n1 n9 = 5.74e−9
9 20 MSTRO
l.lsource n3 n7 = 4.65e−9
RLGATE 17 18 LSOURCE CIN
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
SOURCE 8 7 3
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
RSOURCE RLSOURCE S1A S2A
res.rbreak n17 n18 = 1, tc1 = 1.09e−3, tc2 = 1.04e−7
RBREAK 12
res.rdbody n71 n5 = 1.69e−3, tc1 = 1.95e−3, tc2 = 1.05e−6
13 14 15 17 18
res.rdbreak n72 n5 = 1.45e−1, tc1 = 1.02e−4, tc2 = 1.11e−7
8 13
res.rdrain n50 n16 = 2.80e−3, tc1 = 1.38e−2, tc2 = 3.75e−5
S1B S2B RVTEMP
res.rgate n9 n20 = 0.85
13 19
res.rldrain n2 n5 = 10
CA CB 14 IT + +
res.rlgate n1 n9 = 57.4
+ VBAT
res.rlsource n3 n7 = 46.5
6 5 EGS 8 EDS 8 +
res.rslc1 n5 n51 = 1e−6, tc1 = 1.05e−4, tc2 = 2.13e−7

res.rslc2 n5 n50 = 1e3
8 22
res.rsource n8 n7 = 2.50e−3, tc1 = 0, tc2 = 0
RVTHRES
res.rvtemp n18 n19 = 1, tc1 = −3.0e−3, tc2 = 1.21e−6 res.rvthres n22 n8 = 1, tc1 = −2.92e−3, tc2 = −1.48e−5 spe.ebreak n11 n7 n17 n18 = 117.5 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1 sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51−>n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e−9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/455))** 2)) } }
www.onsemi.com 9