Datasheet NV6257 (Navitas Semiconductor) - 5

FabricanteNavitas Semiconductor
Descripción650V Half-Bridge GaNFast Power IC
Páginas / Página20 / 5 — NV6257. Electrical Characteristics (cont.). Typical conditions: V. = 400 …
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NV6257. Electrical Characteristics (cont.). Typical conditions: V. = 400 V, V. = 15 V, F. = 1 MHz, T. = 25 ºC, I. = 1.5 A, DZ. = 6.2 V

NV6257 Electrical Characteristics (cont.) Typical conditions: V = 400 V, V = 15 V, F = 1 MHz, T = 25 ºC, I = 1.5 A, DZ = 6.2 V

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NV6257 Electrical Characteristics (cont.) Typical conditions: V = 400 V, V = 15 V, F = 1 MHz, T = 25 ºC, I = 1.5 A, DZ = 6.2 V IN CC SW AMB OUT L,H (unless otherwise specified) SYM PARAMETER MIN TYP MAX UNITS CONDITIONS VB Supply Characteristics
V UVLO Rising Turn-On VB B 9.0 V DZ = 6.2 V UV+ Threshold (V – V ) H B SW V UVLO Falling Turn-Off VB B 8.5 V DZ = 6.2 V UV- Threshold (V – V ) H B SW VB V UVLO Hysteresis 0.5 V HYS B V = 0 V, V = 0 V, V = I V Quiescent Current 3 mA INH INL SW QVB B 0 V, V = 12 V, D = 6.2 V B ZH
Switching Characteristics
F Switching Frequency 2 MHz SW t Pulse width 0.02 100 us High side, no low side min PW
Bootstrap FET Characteristics
V = 12 V, V = 0 V, I Bootstrap Charging Current 350 mA CC B BOOT V = 0 V SW
Enable Input Characteristics
IC Enable Rising Turn-on V 4 V EN+ Threshold IC Enable Falling Turn-off V 1 V EN- Threshold V IC Enable Hysteresis 0.5 V EN_HYS Revised 8-1-18 Navitas Semiconductor Confidential Page 5