Datasheet NV6257 (Navitas Semiconductor) - 6
| Fabricante | Navitas Semiconductor |
| Descripción | 650V Half-Bridge GaNFast Power IC |
| Páginas / Página | 20 / 6 — NV6257. Electrical Characteristics (cont.). Typical conditions: V. = 400 … |
| Formato / tamaño de archivo | PDF / 734 Kb |
| Idioma del documento | Inglés |
NV6257. Electrical Characteristics (cont.). Typical conditions: V. = 400 V, V. = 15 V, F. = 1 MHz, T. = 25 ºC, I. = 1.5 A, DZ. = 6.2 V
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NV6257 Electrical Characteristics (cont.) Typical conditions: V = 400 V, V = 15 V, F = 1 MHz, T = 25 ºC, I = 1.5 A, DZ = 6.2 V IN CC SW AMB OUT L,H (unless otherwise specified) SYM PARAMETER MIN TYP MAX UNITS CONDITIONS High-side GaN FET Characteristics
High-side FET Drain-Source V = 6 V, V = 0 V, R 350 mΩ INL INH DS(ON) Resistance I = 2.5 A D V = 0 V, V = 0 V, V Source-Drain Reverse Voltage 3.5 5 V INL INH SD I = 2.5 A SD V = 400V, V = 0 V, Q Output Charge 13 nC DS INL OSS V = 0 V INH Q Reverse Recovery Charge 0 nC V = 400 V RR DS V = 400V, V = 0 V, C Output Capacitance 13 pF DS INL OSS V = 0 V INH Effective Output Capacitance, V = 400 V C (1) 20 pF DS O(er) Energy Related V = 0 V, V = 0 V INL INH Effective Output Capacitance, V = 400 V C (2) 33 pF DS O(tr) Time Related V =0 V, V = 0 V INL INH
Low-side GaN FET Characteristics
Low-side FET Drain-Source V = 0 V, V = 6 V, R 180 mΩ INL INH DS(ON) Resistance I = 4 A D V = 0 V, V = 0 V, V Source-Drain Reverse Voltage 3.5 5 V INL INH SD I = 4 A SD V = 400 V Q Output Charge 20 nC DS OSS V = 0V, V = 0 V INL INH Q Reverse Recovery Charge 0 nC V = 400 V RR DS V = 400 V, C Output Capacitance 20 pF DS OSS V = 0 V, V = 0 V INL INH Effective Output Capacitance, V = 400 V, C (1) 31 pF DS O(er) Energy Related V = 0 V, V = 0 V INL INH Effective Output Capacitance, V = 400 V, C (2) 50 pF DS O(tr) Time Related V = 0 V, V = 0 V INL INH Note 1: C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 400V O(er) OSS DS Note 2: C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 400V O(tr) OSS DS Revised 8-1-18 Navitas Semiconductor Confidential Page 6
NV6257 Electrical Characteristics (cont.) Typical conditions: V = 400 V, V = 15 V, F = 1 MHz, T = 25 ºC, I = 1.5 A, DZ = 6.2 V IN CC SW AMB OUT L,H (unless otherwise specified) SYM PARAMETER MIN TYP MAX UNITS CONDITIONS High-side GaN FET Characteristics
High-side FET Drain-Source V = 6 V, V = 0 V, R 350 mΩ INL INH DS(ON) Resistance I = 2.5 A D V = 0 V, V = 0 V, V Source-Drain Reverse Voltage 3.5 5 V INL INH SD I = 2.5 A SD V = 400V, V = 0 V, Q Output Charge 13 nC DS INL OSS V = 0 V INH Q Reverse Recovery Charge 0 nC V = 400 V RR DS V = 400V, V = 0 V, C Output Capacitance 13 pF DS INL OSS V = 0 V INH Effective Output Capacitance, V = 400 V C (1) 20 pF DS O(er) Energy Related V = 0 V, V = 0 V INL INH Effective Output Capacitance, V = 400 V C (2) 33 pF DS O(tr) Time Related V =0 V, V = 0 V INL INH
Low-side GaN FET Characteristics
Low-side FET Drain-Source V = 0 V, V = 6 V, R 180 mΩ INL INH DS(ON) Resistance I = 4 A D V = 0 V, V = 0 V, V Source-Drain Reverse Voltage 3.5 5 V INL INH SD I = 4 A SD V = 400 V Q Output Charge 20 nC DS OSS V = 0V, V = 0 V INL INH Q Reverse Recovery Charge 0 nC V = 400 V RR DS V = 400 V, C Output Capacitance 20 pF DS OSS V = 0 V, V = 0 V INL INH Effective Output Capacitance, V = 400 V, C (1) 31 pF DS O(er) Energy Related V = 0 V, V = 0 V INL INH Effective Output Capacitance, V = 400 V, C (2) 50 pF DS O(tr) Time Related V = 0 V, V = 0 V INL INH Note 1: C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 400V O(er) OSS DS Note 2: C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 400V O(tr) OSS DS Revised 8-1-18 Navitas Semiconductor Confidential Page 6