Datasheet VIA2000SD (Vishay) - 5

VIA2000SD
www.vishay.com Vishay Semiconductors
THERMAL INFORMATION PARAMETER SYMBOL VALUE UNIT
Junction to ambient thermal resistance RθJA 86 °C/W Junction to case (top) thermal resistance RθJC(top) 28 °C/W Junction to board thermal resistance RθJB 42 °C/W Junction to top characterization parameter ΨJT 4 °C/W Junction to board characterization parameter ΨJB 42 °C/W
TYPICAL CHARACTERISTICS
(Unless otherwise noted, VDD1 = 5 V, VDD2 = 3.3 V, 0.1 V to 2 V, and SHTDN = GND1 = 0 V, fIN = 1 kHz, BW = 10 kHz) Axis Title Axis Title 1.0 10000 0.010 10000 ) V 0.5 0.006 ) 1000 1000 ltage (m o 0 (% 0.002 ty ine ne ne ine ne ne neari 1st li 2nd l 2nd li Offset V 1st li 2nd l 2nd li -0.5 -0.002 put 100 100 Non-Li In - -1.0 -0.006 OSV -1.5 10 -0.010 10 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 3 - Input Offset Voltage vs. Ambient Temperature Fig. 5 - Non-Linearity vs. Ambient Temperature Axis Title Axis Title 0.1 10000 -80 10000 ) (dB 0 n -82 o ) 1000 torti (% 1000 is -0.1 D -84 c ine rror ne ne ine ne ne E n oni 1st li 2nd l 2nd li rm 1st li 2nd l 2nd li Gai -0.2 a -86 - H G 100 100 E tal o T -0.3 - -88 D H T -0.4 10 -90 10 -40 -20 0 20 40 60 80 100 120 -40 -20 0 20 40 60 80 100 120 T - Ambient Temperature (°C) T - Ambient Temperature (°C) amb amb Fig. 4 - Gain Error vs. Ambient Temperature Fig. 6 - Total Harmonic Distortion vs. Ambient Temperature Rev. 1.1, 02-Apr-2025
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