VIA2000SD www.vishay.com Vishay Semiconductors PARAMETER MEASUREMENT INFORMATION 3.3 V V V DD1 DD2 1 V V OUT IN P Differential Battery probe SHTDN OUTN GND GND 1 2 Oscilloscope High voltage probe VCM Fig. 13 - Common-Mode Transient Immunity Test Circuit SAFETY AND INSULATION RATINGS PARAMETERTEST CONDITIONSYMBOLVALUEUNIT Climatic classification According to IEC 68 part 1 40 / 125 / 21 Comparative tracking index DIN EN 60112 (VDE 0303-11); IEC 60112 CTI > 600 V Maximum rated withstanding TEST = VISO, t = 1 min (qualification); V V isolation voltage TEST = 1.2 x VISO, ISO 5000 VRMS t = 1 s (100 % production test) Maximum transient isolation voltage t = 1 min VIOTM 8000 Vpeak Maximum repetitive isolation voltage VIORM 2121 Vpeak Test method per IEC 60065, Maximum surge isolation voltage 1.2/50 μs waveform, VIOSM 6250 Vpeak VTEST = VIOSM x 1.6 AC voltage 1500 VRMS Maximum working isolation voltage VIOWM DC voltage 2121 VDC Tamb = 25 °C, VIO = 500 V RIO > 1012 Ω Isolation resistance Tamb = 125 °C, VIO = 500 V RIO > 1010 Ω Tamb = 150 °C, VIO = 500 V RIO > 109 Ω θ Total power dissipation at 25 °C JA = 86 °C/W, VI = 5.5 V, Tj = 150 °C, P T S 1430 mW amb = 25 °C θ Safety input, output, or supply current JA = 86 °C/W, VI = 5.5 V, Tj = 150 °C, I T S 260 mA amb = 25 °C Maximum safety temperature TS 150 °C Creepage distance ≥ 8 mm SOP-8 (300 mils) Clearance distance ≥ 8 mm Insulation thickness Distance through insulation DTI 28 μm Material group IEC 60664-1 I For rated mains voltage ≤ 150 VRMS I to IV For rated mains voltage ≤ 300 VRMS I to IV For rated mains voltage ≤ 400 VRMS I to IV Pollution degree per DIN VDE 0110, table 1 2 VIORM x 1.875 = Vpd(m), Input to output test voltage, method B1 100 % production test; Vpd(m) 3977 Vpeak tini = tm = 1 s, partial discharge < 5 pC V After environmental tests subgroup 1 IORM x 1.6 = Vpd(m), tini = 1 s, V t pd(m) 3394 Vpeak m = 10 s, partial discharge < 5 pC After input and / or safety test subgroup 2 VIORM x 1.2 = Vpd(m), tini = 1 s, V and subgroup 3 t pd(m) 2545 Vpeak m = 10 s, partial discharge < 5 pC Isolation capacitance f = 1 MHz CIO 0.8 pF Rev. 1.1, 02-Apr-2025 7 Document Number: 80902 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000