Datasheet FDN360P (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | PowerTrench Single P-Channel MOSFET in SOT−23 package |
| Páginas / Página | 6 / 1 — DATA SHEET. www.onsemi.com. SOT−23. CASE 527AG. General Description. … |
| Formato / tamaño de archivo | PDF / 290 Kb |
| Idioma del documento | Inglés |
DATA SHEET. www.onsemi.com. SOT−23. CASE 527AG. General Description. onsemi. Features. MARKING DIAGRAM. ABSOLUTE MAXIMUM RATINGS
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DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH) FDN360P
SOT−23 CASE 527AG General Description
This P−Channel Logic Level MOSFET is produced using
onsemi
’s D advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are G S required.
Features
• −2 A, −30 V
MARKING DIAGRAM
♦ RDS(ON) = 80 mW @ VGS = −10 V ♦ R 360MG DS(ON) = 125 mW @ VGS = −4.5 V • G Low Gate Charge (6.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) 360 = Specific Device Code • High Power Version of Industry Standard SOT−23 Package. Identical M = Date Code Pin−Out to SOT−23 with 30% Higher Power Handling Capability G = Pb−Free Package • These Devices are Pb−Free and are RoHS Compliant (Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS ORDERING INFORMATION
(TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit Device Package Shipping
† VDSS Drain−Source Voltage −30 V FDN360P SOT−23 3000 / V (Pb-Free, Tape & Reel GSS Gate−Source Voltage ±20 V Halide Free) ID Drain Current A Continuous (Note 1a) −2 †For information on tape and reel specifications, Pulsed −10 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification PD Power Dissipation for Single Operation W Brochure, BRD8011/D. (Note 1a) 0.5 (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction −55 to +150 _C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit
RθJA Thermal Resistance, 250 °C/W Junction−to−Ambient (Note 1a) RθJC Thermal Resistance, Junction−to−Case 75 °C/W (Note 1) © Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
January, 2023 − Rev. 8 FDN360P/D
DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH) FDN360P
SOT−23 CASE 527AG General Description
This P−Channel Logic Level MOSFET is produced using
onsemi
’s D advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in−line power loss and fast switching are G S required.
Features
• −2 A, −30 V
MARKING DIAGRAM
♦ RDS(ON) = 80 mW @ VGS = −10 V ♦ R 360MG DS(ON) = 125 mW @ VGS = −4.5 V • G Low Gate Charge (6.2 nC Typical) • High Performance Trench Technology for Extremely Low RDS(ON) 360 = Specific Device Code • High Power Version of Industry Standard SOT−23 Package. Identical M = Date Code Pin−Out to SOT−23 with 30% Higher Power Handling Capability G = Pb−Free Package • These Devices are Pb−Free and are RoHS Compliant (Note: Microdot may be in either location)
ABSOLUTE MAXIMUM RATINGS ORDERING INFORMATION
(TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit Device Package Shipping
† VDSS Drain−Source Voltage −30 V FDN360P SOT−23 3000 / V (Pb-Free, Tape & Reel GSS Gate−Source Voltage ±20 V Halide Free) ID Drain Current A Continuous (Note 1a) −2 †For information on tape and reel specifications, Pulsed −10 including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification PD Power Dissipation for Single Operation W Brochure, BRD8011/D. (Note 1a) 0.5 (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction −55 to +150 _C Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit
RθJA Thermal Resistance, 250 °C/W Junction−to−Ambient (Note 1a) RθJC Thermal Resistance, Junction−to−Case 75 °C/W (Note 1) © Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
January, 2023 − Rev. 8 FDN360P/D