Datasheet FDN360P (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | PowerTrench Single P-Channel MOSFET in SOT−23 package |
| Páginas / Página | 6 / 4 — FDN360P. TYPICAL CHARACTERISTICS. oltage (V). Capacitance (pF). , Gate … |
| Formato / tamaño de archivo | PDF / 290 Kb |
| Idioma del documento | Inglés |
FDN360P. TYPICAL CHARACTERISTICS. oltage (V). Capacitance (pF). , Gate Source V. −V GS. g,Gate Charge (nC)
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FDN360P TYPICAL CHARACTERISTICS
(continued) 10 400 I f = 1 MHz D = −3.6 A VDS = −5 V VGS = 0 V 8 −10 V Ciss 300 −15 V
oltage (V)
6 200 4
Capacitance (pF)
Coss 100
, Gate Source V
2
−V GS
Crss 0 0 0 1 2 3 4 5 6 7 0 6 12 18 24 30
Q −V g,Gate Charge (nC) DS, Drain to Source Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
100 20 Single Pulse R R DS(ON) Limit θJA = 270°C/W 10 10 ms 15 TA = 25°C 100 ms 1ms 10 ms 1 100 ms 10
ransient Power (W)
1 s DC VGS = −10 V
, Drain Current (A)
0.1 Single Pulse
, Peak T
5
−I D
RθJA = 270°C/W T
P (pk)
A = 25°C 0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
−VDS, Drain−Source Voltage (V) t1 Time (s) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
1 D = 0.5
ransient
0.2 RqJA(t) = r(t) + RqJA 0.1 0.1 RqJA = 270°C/W 0.05 P(pk) t 0.02 1 0.01 0.01 t2
Thermal Resistance
TJ − TA = P * RqJA (t) Single Pulse Duty Cycle, D = t1 / t2
r(t), Normalized Effective T
0.0010.0001 0.001 0.01 0.1 1 10 100 1000
t1, Time (s) Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or subsidiaries in the United States and/or other countries.
www.onsemi.com 4
FDN360P TYPICAL CHARACTERISTICS
(continued) 10 400 I f = 1 MHz D = −3.6 A VDS = −5 V VGS = 0 V 8 −10 V Ciss 300 −15 V
oltage (V)
6 200 4
Capacitance (pF)
Coss 100
, Gate Source V
2
−V GS
Crss 0 0 0 1 2 3 4 5 6 7 0 6 12 18 24 30
Q −V g,Gate Charge (nC) DS, Drain to Source Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
100 20 Single Pulse R R DS(ON) Limit θJA = 270°C/W 10 10 ms 15 TA = 25°C 100 ms 1ms 10 ms 1 100 ms 10
ransient Power (W)
1 s DC VGS = −10 V
, Drain Current (A)
0.1 Single Pulse
, Peak T
5
−I D
RθJA = 270°C/W T
P (pk)
A = 25°C 0.01 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
−VDS, Drain−Source Voltage (V) t1 Time (s) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
1 D = 0.5
ransient
0.2 RqJA(t) = r(t) + RqJA 0.1 0.1 RqJA = 270°C/W 0.05 P(pk) t 0.02 1 0.01 0.01 t2
Thermal Resistance
TJ − TA = P * RqJA (t) Single Pulse Duty Cycle, D = t1 / t2
r(t), Normalized Effective T
0.0010.0001 0.001 0.01 0.1 1 10 100 1000
t1, Time (s) Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “
onsemi
” or its affiliates and/or subsidiaries in the United States and/or other countries.
www.onsemi.com 4