Datasheet FDN360P (ON Semiconductor) - 3

FDN360P TYPICAL CHARACTERISTICS
15 2 VGS = −10 V V −5.0 V GS = −3.5 V 1.8 12 −6.0 V −4.5 V 1.6 1.4 9 −4.0 V
−Resistance
−4.0 V 1.2
Normalized
6 −4.5 V 1
Drain Current (A)
−3.5 V −5.0 V
(ON), −I D, DS
−6.0 V
R −Source On
0.8 −7.0 V 3 −3.0 V −10 V
Drain
0.6 0 0.4 0 1 2 3 4 5 0 3 6 9 12 15
−V −I DS, Drain Source Voltage (V) D, Drain Current (A) Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
1.6 0.3
W)
ID = −1 A ID = −2 A 1.4
W)
VGS = −10 V 0.25 1.2 0.2
−Resistance ( , Normalized −Resistance (
TA = 125°C 1
(ON) On
0.15
DSR −Source On (ON),
0.8
DSR
0.1 T
Drain
A = 25°C 0.6 0.05 −50 −25 0 25 50 75 100 125 150 2 4 6 8 10
TJ, Junction Temperature (
5
C) −VGS, Gate to Source Voltage (V) Figure 3. On−Resistance Variation with Figure 4. On−Resistance Variation with Temperature Gate−to−Source Voltage
10 10 T V V = 0 V A = −55°C GS GS = 0 V VDS = −5 V 25°C 8 1 125°C TA = 125°C TA = 125°C 6 0.1 25°C25°C 4 0.01 −55°C
, Drain Current (A)
−55°C
−I D
2
, Reverse Drain Current (A)
0.001
−I S
0 0.0001 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2
−VGS, Gate to Source Voltage (V) −VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3