Datasheet VS-HOT200C080 (Vishay)
| Fabricante | Vishay |
| Descripción | FlatPAK HC0 Transfer Mold Power Module Half Bridge - Power MOSFET, 200 A in FlatPAK HC0 package |
| Páginas / Página | 12 / 1 — VS-HOT200C080. FlatPAK HC0 Transfer Mold Power Module. Half Bridge - … |
| Formato / tamaño de archivo | PDF / 203 Kb |
| Idioma del documento | Inglés |
VS-HOT200C080. FlatPAK HC0 Transfer Mold Power Module. Half Bridge - Power MOSFET, 200 A. FEATURES. PRIMARY CHARACTERISTICS
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VS-HOT200C080
www.vishay.com Vishay Semiconductors
FlatPAK HC0 Transfer Mold Power Module Half Bridge - Power MOSFET, 200 A FEATURES
• Half bridge inverter • Current sensing and temperature sensing • Electrically isolated exposed DBC substrate • C snubber for low EMI • Qualified according to AQG324 guidelines • PPAP capable • Epoxy compound UL 94 V-0 certified • Material categorization: for definitions of compliance
PRIMARY CHARACTERISTICS
please see www.vishay.com/doc?99912 VDSS 80 V RDS(on), Q1 (chip level) 0.45 mΩ ID 195 A at 80 °C Type Modules - MOSFET Package FlatPAK HC0
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS MOSFET
Drain to source voltage VDSS 80 V TC = 25 °C 243 Continuous drain current, VGS at 10 V ID TC = 80 °C 195 TC = 118 °C 150 A Pulsed drain current IDM TC = 25 °C, tp = 250 μs, square waveform 1050 Pulsed source current (body diode) ISM TC = 150 °C, tp = 1 ms, square waveform 1530 Power dissipation PD TC = 25 °C 194 W Gate to source voltage VGS ± 20 V Single pulse avalanche energy EAS TC = 25 °C, L = 1 mH, VGS = 10 V 1800 mJ Single pulse avalanche current IAS TC = 25 °C, L = 1 mH, VGS = 10 V 60 A
MODULE
Insulation voltage (RMS) VISOL Any terminal to case, t = 1 s 2000 V
THERMAL- MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction temperature range TJ -55 - 175 °C Storage temperature range TStg -40 - 150 °C Operating temperature range Top -40 - 150 °C Junction to case MOSFET RthJC - - 0.77 °C/W Case to heat sink Module RthCS Flat, greased surface (1) - 0.15 - Package parasitic stray inductance Lp - 10 - nH Compression force Maximum load, test speed: 0.5 mm/min (2) 3 - 22 kN Weight - 10 - g Mounting torque Mounting screw - M3 - 0.7 - Nm Case style FlatPAK HC0
Notes
(1) Mounting surface flat, smooth, and greased, λgrease = 4.0 W/mK, grease thickness 70 μm (2) Verified by experiment, valid only in certain conditions Revision: 27-Jan-2026
1
Document Number: 97360 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
FlatPAK HC0 Transfer Mold Power Module Half Bridge - Power MOSFET, 200 A FEATURES
• Half bridge inverter • Current sensing and temperature sensing • Electrically isolated exposed DBC substrate • C snubber for low EMI • Qualified according to AQG324 guidelines • PPAP capable • Epoxy compound UL 94 V-0 certified • Material categorization: for definitions of compliance
PRIMARY CHARACTERISTICS
please see www.vishay.com/doc?99912 VDSS 80 V RDS(on), Q1 (chip level) 0.45 mΩ ID 195 A at 80 °C Type Modules - MOSFET Package FlatPAK HC0
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS MOSFET
Drain to source voltage VDSS 80 V TC = 25 °C 243 Continuous drain current, VGS at 10 V ID TC = 80 °C 195 TC = 118 °C 150 A Pulsed drain current IDM TC = 25 °C, tp = 250 μs, square waveform 1050 Pulsed source current (body diode) ISM TC = 150 °C, tp = 1 ms, square waveform 1530 Power dissipation PD TC = 25 °C 194 W Gate to source voltage VGS ± 20 V Single pulse avalanche energy EAS TC = 25 °C, L = 1 mH, VGS = 10 V 1800 mJ Single pulse avalanche current IAS TC = 25 °C, L = 1 mH, VGS = 10 V 60 A
MODULE
Insulation voltage (RMS) VISOL Any terminal to case, t = 1 s 2000 V
THERMAL- MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction temperature range TJ -55 - 175 °C Storage temperature range TStg -40 - 150 °C Operating temperature range Top -40 - 150 °C Junction to case MOSFET RthJC - - 0.77 °C/W Case to heat sink Module RthCS Flat, greased surface (1) - 0.15 - Package parasitic stray inductance Lp - 10 - nH Compression force Maximum load, test speed: 0.5 mm/min (2) 3 - 22 kN Weight - 10 - g Mounting torque Mounting screw - M3 - 0.7 - Nm Case style FlatPAK HC0
Notes
(1) Mounting surface flat, smooth, and greased, λgrease = 4.0 W/mK, grease thickness 70 μm (2) Verified by experiment, valid only in certain conditions Revision: 27-Jan-2026
1
Document Number: 97360 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000